Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › In-situ monitoring and control of germanium profile in silicon-germanium alloy films and temperature monitoring during deposition of silicon films

In-situ monitoring and control of germanium profile in silicon-germanium alloy films and temperature monitoring during deposition of silicon films

US Patent 6881259 · Granted Apr 19, 2005

Estimated economic value: $7,105,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Low resistance contacts including intermetallic alloy of nickel, platinum, titan2024
Region-based power grid generation through modification of an initial power grid2024
Low resistance contacts including intermetallic alloy of nickel, platinum, titan2024
Low resistance contacts including intermetallic alloy of nickel, platinum, titan2021
Low resistance contacts including intermetallic alloy of nickel, platinum, titan2021
Thin film wafer transfer and structure for electronic devices2021
Low resistance contacts including intermetallic alloy of nickel, platinum, titan2019
III-V MOSFET with self-aligned diffusion barrier2018
Selective and conformal passivation layer for 3D high-mobility channel devices2018
III-V MOSFET with self-aligned diffusion barrier2018
Nanowire field effect transistor (FET) and method for fabricating the same2018
III-V MOSFET with self-aligned diffusion barrier2017