Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › III-V MOSFET with self-aligned diffusion barrier

III-V MOSFET with self-aligned diffusion barrier

US Patent 9853109 · Granted Dec 26, 2017

Estimated economic value: $2,704,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Phase-change memory cell with mixed-material switchable region2025
Low resistance contacts including intermetallic alloy of nickel, platinum, titan2024
Low resistance contacts including intermetallic alloy of nickel, platinum, titan2024
Sacrificial material facilitating protection of a substrate in a qubit device2024
System and method for forming solder bumps2024
Direct growth of lateral III-V bipolar transistor on silicon substrate2024
Direct growth of lateral III-V bipolar transistor on silicon substrate2024
Selective chemical frequency modification of Josephson junction resonators2024
Mitigating moisture driven degradation of silicon doped chalcogenides2024
Low resistance contacts including intermetallic alloy of nickel, platinum, titan2024
Low resistance contacts including intermetallic alloy of nickel, platinum, titan2024
PCM cell with resistance drift correction2023