| 10937871 |
III-V transistor device with self-aligned doped bottom barrier |
Cheng-Wei Cheng, Pranita Kerber, Amlan Majumdar |
2021-03-02 |
$2,720,000 |
| 10622207 |
Low external resistance channels in III-V semiconductor devices |
Effendi Leobandung |
2020-04-14 |
$1,668,000 |
| 10128343 |
III-V MOSFET with self-aligned diffusion barrier |
Kevin K. Chan, Cheng-Wei Cheng, Jack O. Chu, Jeng-Bang Yau |
2018-11-13 |
$2,931,000 |
| 10115833 |
Self-aligned heterojunction field effect transistor |
Bahman Hekmatshoartabari, Ghavam G. Shahidi |
2018-10-30 |
$2,799,000 |
| 10014377 |
III-V field effect transistor on a dielectric layer |
Cheng-Wei Cheng, Edward W. Kiewra, Amlan Majumdar, Devendra K. Sadana, Kuen-Ting Shiu |
2018-07-03 |
$3,207,000 |
| 9984873 |
Preparation of low defect density of III-V on Si for device fabrication |
Cheng-Wei Cheng, Devendra K. Sadana, Kuen-Ting Shiu |
2018-05-29 |
$2,015,000 |
| 9947755 |
III-V MOSFET with self-aligned diffusion barrier |
Kevin K. Chan, Cheng-Wei Cheng, Jack O. Chu, Jeng-Bang Yau |
2018-04-17 |
$1,989,000 |
| 9941363 |
III-V transistor device with self-aligned doped bottom barrier |
Cheng-Wei Cheng, Pranita Kerber, Amlan Majumdar |
2018-04-10 |
$2,135,000 |
| 9882021 |
Planar III-V field effect transistor (FET) on dielectric layer |
Cheng-Wei Cheng, Edward W. Kiewra, Amlan Majumdar, Uzma Rana, Devendra K. Sadana +1 more |
2018-01-30 |
$2,622,000 |
| 9853109 |
III-V MOSFET with self-aligned diffusion barrier |
Kevin K. Chan, Cheng-Wei Cheng, Jack O. Chu, Jeng-Bang Yau |
2017-12-26 |
$2,704,000 |
| 9812323 |
Low external resistance channels in III-V semiconductor devices |
Effendi Leobandung |
2017-11-07 |
$4,555,000 |
| 9793405 |
Semiconductor lateral sidewall growth from a semiconductor pillar |
Cheng-Wei Cheng, Sanghoon Lee, Effendi Leobandung, Renee T. Mo |
2017-10-17 |
$4,096,000 |
| 9773903 |
Asymmetric III-V MOSFET on silicon substrate |
Cheng-Wei Cheng, Pranita Kerber, Effendi Leobandung, Amlan Majumdar, Renee T. Mo |
2017-09-26 |
$3,108,000 |
| 9741871 |
Self-aligned heterojunction field effect transistor |
Bahman Hekmatshoartabari, Ghavam G. Shahidi |
2017-08-22 |
$2,056,000 |
| 9722031 |
Reduced current leakage semiconductor device |
Cheng-Wei Cheng, Pranita Kerber, Young-Hee Kim, Effendi Leobandung |
2017-08-01 |
$1,638,000 |
| 9711648 |
Structure and method for CMP-free III-V isolation |
Effendi Leobandung, Chung-Hsun Lin, Amlan Majumdar |
2017-07-18 |
$11,753,000 |
| 9704958 |
III-V field effect transistor on a dielectric layer |
Cheng-Wei Cheng, Edward W. Kiewra, Amlan Majumdar, Devendra K. Sadana, Kuen-Ting Shiu |
2017-07-11 |
$1,748,000 |
| 9666684 |
III-V semiconductor device having self-aligned contacts |
Anirban Basu, Amlan Majumdar |
2017-05-30 |
$11,286,000 |
| 9627266 |
Dual-semiconductor complementary metal-oxide-semiconductor device |
Sanghoon Lee, Effendi Leobandung, Renee T. Mo |
2017-04-18 |
$1,813,000 |
| 9627482 |
Reduced current leakage semiconductor device |
Cheng-Wei Cheng, Pranita Kerber, Young-Hee Kim, Effendi Leobandung |
2017-04-18 |
$1,813,000 |
| 9608066 |
High-K spacer for extension-free CMOS devices with high mobility channel materials |
Takashi Ando, Pouya Hashemi, Vijay Narayanan |
2017-03-28 |
$2,520,000 |
| 9570296 |
Preparation of low defect density of III-V on Si for device fabrication |
Cheng-Wei Cheng, Devendra K. Sadana, Kuen-Ting Shiu |
2017-02-14 |
$1,939,000 |
| 9553166 |
Asymmetric III-V MOSFET on silicon substrate |
Cheng-Wei Cheng, Pranita Kerber, Effendi Leobandung, Amlan Majumdar, Renee T. Mo |
2017-01-24 |
$6,164,000 |
| 9508640 |
Multiple via structure and method |
Cheng-Wei Cheng, Szu-Lin Cheng, Keith E. Fogel, Edward W. Kiewra, Amlan Majumdar +2 more |
2016-11-29 |
$4,439,000 |
| 9508550 |
Preparation of low defect density of III-V on Si for device fabrication |
Cheng-Wei Cheng, Devendra K. Sadana, Keun-Ting Shiu |
2016-11-29 |
$4,543,000 |
