YS

Yanning Sun

IBM: 40 patents #2,346 of 70,183Top 4%
Globalfoundries: 4 patents #817 of 4,424Top 20%
📍 Scarsdale, NY: #26 of 560 inventorsTop 5%
🗺 New York: #2,285 of 115,490 inventorsTop 2%
Overall (All Time): #67,927 of 4,157,543Top 2%
44
Patents All Time

Issued Patents All Time

Showing 26–44 of 44 patents

Patent #TitleCo-InventorsDate
9437614 Dual-semiconductor complementary metal-oxide-semiconductor device Sanghoon Lee, Effendi Leobandung, Renee T. Mo 2016-09-06
9397161 Reduced current leakage semiconductor device Cheng-Wei Cheng, Pranita Kerber, Young-Hee Kim, Effendi Leobandung 2016-07-19
9337281 Planar semiconductor growth on III-V material Cheng-Wei Cheng, Jack O. Chu, Devendra K. Sadana, Kuen-Ting Shiu 2016-05-10
9324853 III-V semiconductor device having self-aligned contacts Anirban Basu, Amlan Majumdar, Kuen-Ting Shiu 2016-04-26
9287115 Planar III-V field effect transistor (FET) on dielectric layer Cheng-Wei Cheng, Edward W. Kiewra, Amlan Majumdar, Uzma Rana, Devendra K. Sadana +1 more 2016-03-15
9159822 III-V semiconductor device having self-aligned contacts Anirban Basu, Amlan Majumdar, Kuen-Ting Shiu 2015-10-13
9105571 Interface engineering to optimize metal-III-V contacts Christian Lavoie, Uzma Rana, Devendra K. Sadana, Kuen-Ting Shiu, Paul M. Solomon +1 more 2015-08-11
9093532 Overlapped III-V finFET with doped semiconductor extensions Cheng-Wei Cheng, Effendi Leobandung, Kuen-Ting Shiu 2015-07-28
9087775 Planar semiconductor growth on III-V material Cheng-Wei Cheng, Jack O. Chu, Devendra K. Sadana, Kuen-Ting Shiu 2015-07-21
9064946 III-V FET device with overlapped extension regions using gate last Amlan Majumdar 2015-06-23
9059288 Overlapped III-V finfet with doped semiconductor extensions Cheng-Wei Cheng, Effendi Leobandung, Kuen-Ting Shiu 2015-06-16
9059267 III-V device with overlapped extension regions using replacement gate Amlan Majumdar 2015-06-16
9041061 III-V device with overlapped extension regions using replacement gate Amlan Majumdar 2015-05-26
9041060 III-V FET device with overlapped extension regions using gate last Amlan Majumdar 2015-05-26
8937299 III-V finFETs on silicon substrate Anirban Basu, Cheng-Wei Cheng, Amlan Majumdar, Ryan M. Martin, Uzma Rana +2 more 2015-01-20
8895352 Method to improve nucleation of materials on graphene and carbon nanotubes Katherina Babich, Alessandro C. Callegari, Zhihong Chen, Edward W. Kiewra 2014-11-25
8859316 Schottky junction si nanowire field-effect bio-sensor/molecule detector Dechao Guo, Christian Lavoie, Christine Ouyang Qiqing, Zhen Zhang 2014-10-14
8816333 Method to improve nucleation of materials on graphene and carbon nanotubes Katherina Babich, Alessandro C. Callegari, Zhihong Chen, Edward W. Kiewra 2014-08-26
7964896 Buried channel MOSFET using III-V compound semiconductors and high k gate dielectrics Edward W. Kiewra, Steven J. Koester, Devendra K. Sadana, Ghavam G. Shahidi 2011-06-21