| 7713829 |
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology |
Jack O. Chu, Douglas D. Coolbaugh, James S. Dunn, David R. Greenberg, David L. Harame +4 more |
2010-05-11 |
$5,650,000 |
| 7413967 |
Yield improvement in silicon-germanium epitaxial growth |
Mark D. Dupuis, Wade J. Hodge, Daniel Kelly |
2008-08-19 |
$14,278,000 |
| 7173274 |
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology |
Jack O. Chu, Douglas D. Coolbaugh, James S. Dunn, David R. Greenberg, David L. Harame +4 more |
2007-02-06 |
$8,225,000 |
| 7118995 |
Yield improvement in silicon-germanium epitaxial growth |
Mark D. Dupuis, Wade J. Hodge, Daniel Kelly |
2006-10-10 |
$5,276,000 |
| 6900519 |
Diffused extrinsic base and method for fabrication |
Marc W. Cantell, James S. Dunn, David L. Harame, Robb Johnson, Louis D. Lanzerotti +2 more |
2005-05-31 |
$8,494,000 |
| 6881259 |
In-situ monitoring and control of germanium profile in silicon-germanium alloy films and temperature monitoring during deposition of silicon films |
David C. Ahlgren, Jack O. Chu, Basanth Jagannathan |
2005-04-19 |
$7,105,000 |
| 6875279 |
Single reactor, multi-pressure chemical vapor deposition for semiconductor devices |
Jack O. Chu, Basanth Jagannathan |
2005-04-05 |
$5,479,000 |
| 6869854 |
Diffused extrinsic base and method for fabrication |
Marc W. Cantell, James S. Dunn, David L. Harame, Robb Johnson, Louis D. Lanzerotti +2 more |
2005-03-22 |
$9,449,000 |
| 6858903 |
MOSFET device with in-situ doped, raised source and drain structures |
Wesley C. Natzle, Marc W. Cantell, Louis D. Lanzerotti, Effendi Leobandung, Brian L. Tessier |
2005-02-22 |
$11,368,000 |
| 6858532 |
Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling |
Wesley C. Natzle, David C. Ahlgren, Steven G. Barbee, Marc W. Cantell, Basanth Jagannathan +2 more |
2005-02-22 |
$11,368,000 |
| 6815802 |
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology |
Jack O. Chu, Douglass Duane Coolbaugh, James S. Dunn, David R. Greenberg, David L. Harame +4 more |
2004-11-09 |
$4,707,000 |
| 6780735 |
Method to increase carbon and boron doping concentrations in Si and SiGe films |
Basanth Jagannathan, Jack O. Chu, Byeongju Park |
2004-08-24 |
$9,549,000 |
| 6774000 |
Method of manufacture of MOSFET device with in-situ doped, raised source and drain structures |
Wesley C. Natzle, Marc W. Cantell, Louis D. Lanzerotti, Effendi Leobandung, Brian L. Tessier |
2004-08-10 |
$6,982,000 |
| 6744079 |
Optimized blocking impurity placement for SiGe HBTs |
Basanth Jagannathan, Alvin J. Joseph, Xuefeng Liu, Kathryn T. Schonenberg |
2004-06-01 |
$8,295,000 |
| 6426265 |
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology |
Jack O. Chu, Douglas D. Coolbaugh, James S. Dunn, David R. Greenberg, David L. Harame +4 more |
2002-07-30 |
$10,205,000 |
| 6354309 |
Process for treating a semiconductor substrate |
Russell H. Arndt, Glenn W. Gale, Frederick William Kern, Jr., Karen P. Madden, Harald Okorn-Schmidt +2 more |
2002-03-12 |
$13,941,000 |
| 6173720 |
Process for treating a semiconductor substrate |
Russell H. Arndt, Glenn W. Gale, Frederick William Kern, Jr., Karen P. Madden, Harald Okorn-Schmidt +2 more |
2001-01-16 |
$36,198,000 |
| 5948193 |
Process for fabricating a multilayer ceramic substrate from thin greensheet |
Michael A. Cohn, Jon A. Casey, Christopher N. Collins, Robert A. Rita, Robert J. Sullivan +2 more |
1999-09-07 |
$30,723,000 |
| 5874162 |
Weighted sintering process and conformable load tile |
Kurt E. Bastian, James J. Burte, Michael A. Cohn, Christopher N. Collins, Joseph P. DeGeorge +5 more |
1999-02-23 |
$8,993,000 |
| 5741131 |
Stacking system for substrates |
Joseph P. DeGeorge, Kurt E. Bastian, Michael A. Cohn, Christopher N. Collins, Italo A. DiNunzio |
1998-04-21 |
$18,070,000 |
