Issued Patents All Time
Showing 1–20 of 20 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7713829 | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology | Jack O. Chu, Douglas D. Coolbaugh, James S. Dunn, David R. Greenberg, David L. Harame +4 more | 2010-05-11 |
| 7413967 | Yield improvement in silicon-germanium epitaxial growth | Mark D. Dupuis, Wade J. Hodge, Daniel Kelly | 2008-08-19 |
| 7173274 | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology | Jack O. Chu, Douglas D. Coolbaugh, James S. Dunn, David R. Greenberg, David L. Harame +4 more | 2007-02-06 |
| 7118995 | Yield improvement in silicon-germanium epitaxial growth | Mark D. Dupuis, Wade J. Hodge, Daniel Kelly | 2006-10-10 |
| 6900519 | Diffused extrinsic base and method for fabrication | Marc W. Cantell, James S. Dunn, David L. Harame, Robb Johnson, Louis D. Lanzerotti +2 more | 2005-05-31 |
| 6881259 | In-situ monitoring and control of germanium profile in silicon-germanium alloy films and temperature monitoring during deposition of silicon films | David C. Ahlgren, Jack O. Chu, Basanth Jagannathan | 2005-04-19 |
| 6875279 | Single reactor, multi-pressure chemical vapor deposition for semiconductor devices | Jack O. Chu, Basanth Jagannathan | 2005-04-05 |
| 6869854 | Diffused extrinsic base and method for fabrication | Marc W. Cantell, James S. Dunn, David L. Harame, Robb Johnson, Louis D. Lanzerotti +2 more | 2005-03-22 |
| 6858903 | MOSFET device with in-situ doped, raised source and drain structures | Wesley C. Natzle, Marc W. Cantell, Louis D. Lanzerotti, Effendi Leobandung, Brian L. Tessier | 2005-02-22 |
| 6858532 | Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling | Wesley C. Natzle, David C. Ahlgren, Steven G. Barbee, Marc W. Cantell, Basanth Jagannathan +2 more | 2005-02-22 |
| 6815802 | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology | Jack O. Chu, Douglass Duane Coolbaugh, James S. Dunn, David R. Greenberg, David L. Harame +4 more | 2004-11-09 |
| 6780735 | Method to increase carbon and boron doping concentrations in Si and SiGe films | Basanth Jagannathan, Jack O. Chu, Byeongju Park | 2004-08-24 |
| 6774000 | Method of manufacture of MOSFET device with in-situ doped, raised source and drain structures | Wesley C. Natzle, Marc W. Cantell, Louis D. Lanzerotti, Effendi Leobandung, Brian L. Tessier | 2004-08-10 |
| 6744079 | Optimized blocking impurity placement for SiGe HBTs | Basanth Jagannathan, Alvin J. Joseph, Xuefeng Liu, Kathryn T. Schonenberg | 2004-06-01 |
| 6426265 | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology | Jack O. Chu, Douglas D. Coolbaugh, James S. Dunn, David R. Greenberg, David L. Harame +4 more | 2002-07-30 |
| 6354309 | Process for treating a semiconductor substrate | Russell H. Arndt, Glenn W. Gale, Frederick William Kern, Jr., Karen P. Madden, Harald Okorn-Schmidt +2 more | 2002-03-12 |
| 6173720 | Process for treating a semiconductor substrate | Russell H. Arndt, Glenn W. Gale, Frederick William Kern, Jr., Karen P. Madden, Harald Okorn-Schmidt +2 more | 2001-01-16 |
| 5948193 | Process for fabricating a multilayer ceramic substrate from thin greensheet | Michael A. Cohn, Jon A. Casey, Christopher N. Collins, Robert A. Rita, Robert J. Sullivan +2 more | 1999-09-07 |
| 5874162 | Weighted sintering process and conformable load tile | Kurt E. Bastian, James J. Burte, Michael A. Cohn, Christopher N. Collins, Joseph P. DeGeorge +5 more | 1999-02-23 |
| 5741131 | Stacking system for substrates | Joseph P. DeGeorge, Kurt E. Bastian, Michael A. Cohn, Christopher N. Collins, Italo A. DiNunzio | 1998-04-21 |