Issued Patents All Time
Showing 25 most recent of 35 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9673312 | Power semiconductor device with over-current protection | Xing Huang | 2017-06-06 |
| 9536803 | Integrated power module with improved isolation and thermal conductivity | Robert Charles Dry, Don Willis | 2017-01-03 |
| 8884270 | Vertical junction field effect transistors with improved thermal characteristics and methods of making | Janna Casady, Jeffrey Casady, Kiran V. Chatty, Andrew P. Ritenour | 2014-11-11 |
| 8872281 | Silicided trench contact to buried conductive layer | Douglas D. Coolbaugh, Jeffrey B. Johnson, Peter J. Lindgren, Xuefeng Lie, James S. Nakos +2 more | 2014-10-28 |
| 8659057 | Self-aligned semiconductor devices with reduced gate-source leakage under reverse bias and methods of making | Andrew P. Ritenour | 2014-02-25 |
| 8513675 | Vertical junction field effect transistors having sloped sidewalls and methods of making | Andrew P. Ritenour | 2013-08-20 |
| 8507335 | Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making | Igor Sankin, Joseph Neil Merrett | 2013-08-13 |
| 8466017 | Methods of making semiconductor devices having implanted sidewalls and devices made thereby | Andrew P. Ritenour | 2013-06-18 |
| 8338265 | Silicided trench contact to buried conductive layer | Douglas D. Coolbaugh, Jeffrey B. Johnson, Peter J. Lindgren, Xuefeng Liu, James S. Nakos +2 more | 2012-12-25 |
| 8288244 | Lateral passive device having dual annular electrodes | David S. Collins, Jeffrey B. Johnson, Xuefeng Liu, Bradley A. Orner, Robert M. Rassel | 2012-10-16 |
| 8202772 | Vertical junction field effect transistors having sloped sidewalls and methods of making | Andrew P. Ritenour | 2012-06-19 |
| 8163612 | Silicon germanium heterostructure barrier varactor | Erik M. Dahlstrom, Alvin J. Joseph, Robert M. Rassel | 2012-04-24 |
| 8105924 | Deep trench based far subcollector reachthrough | Bradley A. Orner, Robert M. Rassel, Steven H. Voldman | 2012-01-31 |
| 8058655 | Vertical junction field effect transistors having sloped sidewalls and methods of making | Andrew P. Ritenour | 2011-11-15 |
| 8030167 | Varied impurity profile region formation for varying breakdown voltage of devices | Douglas D. Coolbaugh, Louis D. Lanzerotti, Bradley A. Orner, Jay S. Rascoe, Stephen A. St. Onge | 2011-10-04 |
| 8015538 | Design structure with a deep sub-collector, a reach-through structure and trench isolation | Douglas D. Coolbaugh, Xuefeng Liu, Robert M. Rassel, Steven H. Voldman | 2011-09-06 |
| 7994548 | Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making | Andrew P. Ritenour | 2011-08-09 |
| 7977713 | Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making | Igor Sankin, Joseph Neil Merrett | 2011-07-12 |
| 7821097 | Lateral passive device having dual annular electrodes | David S. Collins, Jeffrey B. Johnson, Xuefeng Liu, Bradley A. Orner, Robert M. Rassel | 2010-10-26 |
| 7709930 | Tuneable semiconductor device with discontinuous portions in the sub-collector | Andreas D. Stricker, Jae-Sung Rieh, Gregory G. Freeman, Steven H. Voldman, Stephen A. St. Onge | 2010-05-04 |
| 7700453 | Method for forming hyper-abrupt junction varactors | Douglas D. Coolbaugh, Stephen Furkay, Jeffrey B. Johnson, Robert M. Rassel | 2010-04-20 |
| 7696604 | Silicon germanium heterostructure barrier varactor | Erik M. Dahlstrom, Alvin J. Joseph, Robert M. Rassel | 2010-04-13 |
| 7691734 | Deep trench based far subcollector reachthrough | Bradley A. Orner, Robert M. Rassel, Steven H. Voldman | 2010-04-06 |
| 7550787 | Varied impurity profile region formation for varying breakdown voltage of devices | Douglas D. Coolbaugh, Louis D. Lanzerotti, Bradley A. Orner, Jay S. Rascoe, Stephen A. St. Onge | 2009-06-23 |
| 7491632 | Buried subcollector for high frequency passive semiconductor devices | Douglas D. Coolbaugh, Xuefeng Liu, Robert M. Rassel | 2009-02-17 |