| 11152495 |
Integrated circuit heat dissipation using nanostructures |
Max L. Lifson, James A. Slinkman, Theodore G. van Kessel, Randy L. Wolf |
2021-10-19 |
$2,168,000 |
| 11081572 |
Integrated circuit heat dissipation using nanostructures |
Max L. Lifson, James A. Slinkman, Theodore G. van Kessel, Randy L. Wolf |
2021-08-03 |
$4,187,000 |
| 10629710 |
Integrated circuit heat dissipation using nanostructures |
Max L. Lifson, James A. Slinkman, Theodore G. van Kessel, Randy L. Wolf |
2020-04-21 |
$2,793,000 |
| 10600893 |
Integrated circuit heat dissipation using nanostructures |
Max L. Lifson, James A. Slinkman, Theodore G. van Kessel, Randy L. Wolf |
2020-03-24 |
$1,716,000 |
| 10109553 |
Integrated circuit heat dissipation using nanostructures |
Max L. Lifson, James A. Slinkman, Theodore G. van Kessel, Randy L. Wolf |
2018-10-23 |
$2,704,000 |
| 10068827 |
Integrated circuit heat dissipation using nanostructures |
Max L. Lifson, James A. Slinkman, Theodore G. van Kessel, Randy L. Wolf |
2018-09-04 |
$2,923,000 |
| 9978849 |
SOI-MOSFET gate insulation layer with different thickness |
Michel J. Abou-Khalil, Blaine J. Gross, Mark D. Jaffe, Alvin J. Joseph, Richard A. Phelps +2 more |
2018-05-22 |
$15,534,000 |
| 9847415 |
Field effect transistor and method of manufacture |
Alvin J. Joseph, Stephen E. Luce, John J. Pekarik, Yun Shi |
2017-12-19 |
$11,941,000 |
| 9704978 |
Integrated circuit heat dissipation using nanostructures |
Max L. Lifson, James A. Slinkman, Theodore G. van Kessel, Randy L. Wolf |
2017-07-11 |
$1,748,000 |
| 9666701 |
Integrated circuit heat dissipation using nanostructures |
Max L. Lifson, James A. Slinkman, Theodore G. van Kessel, Randy L. Wolf |
2017-05-30 |
$1,983,000 |
| 9601606 |
Integrated circuit heat dissipation using nanostructures |
Max L. Lifson, James A. Slinkman, Theodore G. van Kessel, Randy L. Wolf |
2017-03-21 |
$2,195,000 |
| 9530711 |
Silicon-on-insulator heat sink |
Alvin J. Joseph, James A. Slinkman, Randy L. Wolf |
2016-12-27 |
$8,113,000 |
| 9472570 |
Diode biased body contacted transistor |
Randy L. Wolf |
2016-10-18 |
$3,531,000 |
| 9324628 |
Integrated circuit heat dissipation using nanostructures |
Max L. Lifson, James A. Slinkman, Theodore G. van Kessel, Randy L. Wolf |
2016-04-26 |
$2,956,000 |
| 9257324 |
Forming structures on resistive substrates |
Renata Camillo-Castillo, James S. Dunn, Jeffrey P. Gambino, Douglas B. Hershberger, Alvin J. Joseph +2 more |
2016-02-09 |
$571,000 |
| 9214561 |
Thin body switch transistor |
Michel J. Abou-Khalil, Mark D. Jaffe, Alvin J. Joseph, James A. Slinkman |
2015-12-15 |
$1,367,000 |
| 9165819 |
High linearity SOI wafer for low-distortion circuit applications |
Jeffrey E. Hanrahan, Mark D. Jaffe, Alvin J. Joseph, Dale W. Martin, Gerd Pfeiffer +1 more |
2015-10-20 |
$1,187,000 |
| 9070651 |
Non-linear kerf monitor and design structure thereof |
Alvin J. Joseph, Randy L. Wolf |
2015-06-30 |
$3,617,000 |
| 9059269 |
Silicon-on-insulator heat sink |
Alvin J. Joseph, James A. Slinkman, Randy L. Wolf |
2015-06-16 |
$2,098,000 |
| 8963293 |
High resistivity silicon-on-insulator substrate and method of forming |
Mark D. Jaffe, Alvin J. Joseph |
2015-02-24 |
$3,851,000 |
| 8951896 |
High linearity SOI wafer for low-distortion circuit applications |
Jeffrey E. Hanrahan, Mark D. Jaffe, Alvin J. Joseph, Dale W. Martin, Gerd Pfeiffer +1 more |
2015-02-10 |
$3,717,000 |
| 8921190 |
Field effect transistor and method of manufacture |
Alvin J. Joseph, Stephen E. Luce, John J. Pekarik, Yun Shi |
2014-12-30 |
$7,309,000 |
| 8916467 |
SOI radio frequency switch with enhanced signal fidelity and electrical isolation |
Alvin J. Joseph, Edward J. Nowak, Yun Shi, James A. Slinkman |
2014-12-23 |
$3,729,000 |
| 8912597 |
Semiconductor device including asymmetric lightly doped drain (LDD) region, related method and design structure |
Robert M. Rassel, Yun Shi, Mark E. Stidham |
2014-12-16 |
$3,695,000 |
| 8901676 |
Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) having a high drain-to-body breakdown voltage (Vb), a method of forming an LEDMOSFET, and a silicon-controlled rectifier (SCR) incorporating a complementary pair of LEDMOSFETs |
Michel J. Abou-Khalil, Alvin J. Joseph, Theodore Letavic, James A. Slinkman |
2014-12-02 |
$2,384,000 |
