Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Integration of multiple gate oxides with shallow trench isolation methods to minimize divot formation

Integration of multiple gate oxides with shallow trench isolation methods to minimize divot formation

US Patent 8227318 · Granted Jul 24, 2012

Estimated economic value: $4,383,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Temperature detection using negative temperature coefficient resistor in GaN set2025
Electrically programmable fuse over crystalline semiconductor materials2025
Fuse element for process-induced damage protection structure2025
Multi-channel transistor2024
Structure including multi-level field plate and method of forming the structure2024
Structure including resistor network for back biasing FET stack2024
Unlanded thermal dissipation pillar adjacent active contact2024
Particulate matter sensor2024
Field-effect transistors with a body pedestal2023
Measuring time-of-flight using a plurality of detector subsystems and histogram 2023
Structure providing poly-resistor under shallow trench isolation and above high 2023
Structure including polycrystalline resistor with dopant-including polycrystalli2023