| 12476111 |
Selective area diffusion doping of III-N materials |
Travis J. Anderson, Alan G. Jacobs, Karl D. Hobart, Francis J. Kub |
2025-11-18 |
|
| 12439653 |
Multi-layer hybrid edge termination for III-N power devices |
Travis J. Anderson, Andrew D. Koehler, Alan G. Jacobs, Matthew A. Porter, Karl D. Hobart +5 more |
2025-10-07 |
|
| 11569442 |
Dielectric retention and method of forming memory pillar |
Saba Zare, Michael Rizzolo, Theodorus E. Standaert |
2023-01-31 |
$7,725,000 |
| 11043494 |
Structure and method for equal substrate to channel height between N and P fin-FETs |
Lawrence A. Clevenger, Leigh Anne H. Clevenger, Gauri Karve, Fee Li Lie, Deepika Priyadarshini +2 more |
2021-06-22 |
$6,016,000 |
| 11031250 |
Semiconductor structures of more uniform thickness |
Michael Rizzolo, Son V. Nguyen, Raghuveer R. Patlolla, Donald F. Canaperi |
2021-06-08 |
$4,452,000 |
| 10818751 |
Nanosheet transistor barrier for electrically isolating the substrate from the source or drain regions |
Fee Li Lie, Nicolas Loubet, Gauri Karve, Indira Seshadri, Lawrence A. Clevenger +1 more |
2020-10-27 |
$6,165,000 |
| 10811528 |
Two step fin etch and reveal for VTFETs and high breakdown LDVTFETs |
Xuefeng Liu, Brent A. Anderson, Huiming Bu, Junli Wang |
2020-10-20 |
$3,651,000 |
| 10804106 |
High temperature ultra-fast annealed soft mask for semiconductor devices |
Oleg Gluschenkov, Indira Seshadri, Ekmini Anuja De Silva |
2020-10-13 |
$4,674,000 |
| 10734523 |
Nanosheet substrate to source/drain isolation |
Fee Li Lie, Ekmini Anuja De Silva, Indira Seshadri, Gauri Karve, Lawrence A. Clevenger +2 more |
2020-08-04 |
$3,150,000 |
| 10388789 |
Reducing series resistance between source and/or drain regions and a channel region |
Oleg Gluschenkov |
2019-08-20 |
$1,949,000 |
| 10381348 |
Structure and method for equal substrate to channel height between N and P fin-FETs |
Lawrence A. Clevenger, Leigh Anne H. Clevenger, Gauri Karve, Fee Li Lie, Deepika Priyadarshini +2 more |
2019-08-13 |
$1,909,000 |
| 10361127 |
Vertical transport FET with two or more gate lengths |
Gauri Karve, Fee Li Lie, Indira Seshadri, Leigh Anne H. Clevenger, Ekmini Anuja De Silva +1 more |
2019-07-23 |
$2,519,000 |
| 10361306 |
High acceptor level doping in silicon germanium |
Oleg Gluschenkov, Shogo Mochizuki, Alexander Reznicek |
2019-07-23 |
$2,519,000 |
| 10319855 |
Reducing series resistance between source and/or drain regions and a channel region |
Oleg Gluschenkov |
2019-06-11 |
$1,829,000 |
| 10229910 |
Separate N and P fin etching for reduced CMOS device leakage |
Isabel Cristina Chu, Lawrence A. Clevenger, Leigh Anne H. Clevenger, Gauri Karve, Fee Li Lie +3 more |
2019-03-12 |
$2,141,000 |
| 9799736 |
High acceptor level doping in silicon germanium |
Oleg Gluschenkov, Shogo Mochizuki, Alexander Reznicek |
2017-10-24 |
$3,030,000 |
| 9711507 |
Separate N and P fin etching for reduced CMOS device leakage |
Isabel Cristina Chu, Lawrence A. Clevenger, Leigh Anne H. Clevenger, Gauri Karve, Fee Li Lie +3 more |
2017-07-18 |
$2,009,000 |
| 9666486 |
Contained punch through stopper for CMOS structures on a strain relaxed buffer substrate |
Hemanth Jagannathan, Shogo Mochizuki, Alexander Reznicek |
2017-05-30 |
$1,983,000 |
