Issued Patents All Time
Showing 26–50 of 309 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11145658 | Semiconductor structures with deep trench capacitor and methods of manufacture | Kevin K. Chan, Sivananda K. Kanakasabapathy, Babar A. Khan, Masaharu Kobayashi, Effendi Leobandung +1 more | 2021-10-12 |
| 11145813 | Bottom electrode for semiconductor memory device | Chih-Chao Yang, Daniel C. Edelstein | 2021-10-12 |
| 11121032 | Fabrication of self-aligned gate contacts and source/drain contacts directly above gate electrodes and source/drains | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2021-09-14 |
| 11081643 | Bevel metal removal using ion beam etch | Ashim Dutta, Saba Zare, Michael Rizzolo, Daniel C. Edelstein | 2021-08-03 |
| 11056493 | Semiconductor structures with deep trench capacitor and methods of manufacture | Kevin K. Chan, Sivananda K. Kanakasabapathy, Babar A. Khan, Masaharu Kobayashi, Effendi Leobandung +1 more | 2021-07-06 |
| 11049744 | Optimizing semiconductor binning by feed-forward process adjustment | Benjamin D. Briggs, Lawrence A. Clevenger, Nicholas Anthony Lanzillo, Michael Rizzolo, James H. Stathis | 2021-06-29 |
| 11031542 | Contact via with pillar of alternating layers | Chih-Chao Yang, Daniel C. Edelstein, Michael Rizzolo | 2021-06-08 |
| 10998230 | Fabrication of self-aligned gate contacts and source/drain contacts directly above gate electrodes and source/drains | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2021-05-04 |
| 10998227 | Metal insulator metal capacitor with extended capacitor plates | Chih-Chao Yang | 2021-05-04 |
| 10985056 | Structure and method to improve FAV RIE process margin and Electromigration | Benjamin D. Briggs, Joe Lee | 2021-04-20 |
| 10971601 | Replacement metal gate structures | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2021-04-06 |
| 10971398 | Cobalt interconnect structure including noble metal layer | Chih-Chao Yang | 2021-04-06 |
| 10957584 | Structure and method to improve FAV RIE process margin and electromigration | Benjamin D. Briggs, Joe Lee | 2021-03-23 |
| 10957582 | Self aligned via and pillar cut for at least a self aligned double pitch | Benjamin D. Briggs, Lawrence A. Clevenger, Michael Rizzolo, Terry A. Spooner | 2021-03-23 |
| 10957581 | Self aligned via and pillar cut for at least a self aligned double pitch | Benjamin D. Briggs, Lawrence A. Clevenger, Michael Rizzolo, Terry A. Spooner | 2021-03-23 |
| 10930754 | Replacement metal gate structures | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2021-02-23 |
| 10916660 | Vertical transistor with a body contact for back-biasing | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2021-02-09 |
| 10903338 | Vertical FET with shaped spacer to reduce parasitic capacitance | Junli Wang, Kangguo Cheng, Veeraraghavan S. Basker | 2021-01-26 |
| 10892404 | Sacrificial buffer layer for metal removal at a bevel edge of a substrate | Ashim Dutta, Saba Zare, Michael Rizzolo, Daniel C. Edelstein | 2021-01-12 |
| 10830841 | Magnetic tunnel junction performance monitoring based on magnetic field coupling | Nicholas Anthony Lanzillo, Benjamin D. Briggs, Michael Rizzolo, Lawrence A. Clevenger, James H. Stathis | 2020-11-10 |
| 10833149 | Capacitors | Veeraraghavan S. Basker, Kangguo Cheng, Christopher J. Penny, Junli Wang | 2020-11-10 |
| 10832952 | Selective recessing to form a fully aligned via | Benjamin D. Briggs, Jessica Dechene, Elbert E. Huang, Joe Lee | 2020-11-10 |
| 10833257 | Formation of embedded magnetic random-access memory devices with multi-level bottom electrode via contacts | Ashim Dutta, John C. Arnold, Chih-Chao Yang | 2020-11-10 |
| 10825890 | Metal-insulator-metal capacitor structure | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2020-11-03 |
| 10825891 | Metal-insulator-metal capacitor structure | Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang | 2020-11-03 |