Issued Patents All Time
Showing 25 most recent of 92 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11145758 | Fully-depleted CMOS transistors with u-shaped channel | Kangguo Cheng, Bruce B. Doris, Terence B. Hook | 2021-10-12 |
| 10439046 | Structure and method for improving access resistance in U-channel ETSOI | Rajiv V. Joshi, Richard Q. Williams | 2019-10-08 |
| 10373835 | Method of lateral oxidation of nFET and pFET high-K gate stacks | Takashi Ando, Martin M. Frank | 2019-08-06 |
| 10326019 | Fully-depleted CMOS transistors with U-shaped channel | Kangguo Cheng, Bruce B. Doris, Terence B. Hook | 2019-06-18 |
| 10121786 | FinFET with U-shaped channel and S/D epitaxial cladding extending under gate spacers | Takashi Ando, Isaac Lauer, Ramachandran Muralidhar, Ghavam G. Shahidi | 2018-11-06 |
| 9941128 | Method of lateral oxidation of NFET and PFET high-k gate stacks | Takashi Ando, Martin M. Frank | 2018-04-10 |
| 9793400 | Semiconductor device including dual-layer source/drain region | Kangguo Cheng, Zhen Zhang | 2017-10-17 |
| 9748336 | Semiconductor device including dual-layer source/drain region | Kangguo Cheng, Zhen Zhang | 2017-08-29 |
| 9748348 | Fully-depleted SOI MOSFET with U-shaped channel | Takashi Ando, Isaac Lauer, Ramachandran Muralidhar | 2017-08-29 |
| 9666267 | Structure and method for adjusting threshold voltage of the array of transistors | Jin Cai, Kangguo Cheng, Ali Khakifirooz, Tak H. Ning | 2017-05-30 |
| 9627378 | Methods of forming FINFETs with locally thinned channels from fins having in-situ doped epitaxial cladding | Takashi Ando, Isaac Lauer, Ramachandran Muralidhar, Ghavam G. Shahidi | 2017-04-18 |
| 9564500 | Fully-depleted SOI MOSFET with U-shaped channel | Takashi Ando, Isaac Lauer, Ramachandran Muralidhar | 2017-02-07 |
| 9484464 | Structure and method for adjusting threshold voltage of the array of transistors | Jin Cai, Kangguo Cheng, Ali Khakifirooz, Tak H. Ning | 2016-11-01 |
| 9466492 | Method of lateral oxidation of NFET and PFET high-K gate stacks | Takashi Ando, Martin M. Frank | 2016-10-11 |
| 9425080 | Non-volatile memory device employing semiconductor nanoparticles | Kangguo Cheng, Hemanth Jagannathan, Ali Khakifirooz, Tak H. Ning, Ghavam G. Shahidi | 2016-08-23 |
| 9379028 | SOI CMOS structure having programmable floating backplate | Jin Cai, Ali Khakifirooz, Tak H. Ning, Jeng-Bang Yau | 2016-06-28 |
| 8994006 | Non-volatile memory device employing semiconductor nanoparticles | Kangguo Cheng, Hemanth Jagannathan, Ali Khakifirooz, Tak H. Ning, Ghavam G. Shahidi | 2015-03-31 |
| 8947927 | Gated diode memory cells | Wing K. Luk | 2015-02-03 |
| 8941412 | Amplifiers using gated diodes | Wing K. Luk | 2015-01-27 |
| 8877606 | Low cost fabrication of double box back gate silicon-on-insulator wafers with subsequent self aligned shallow trench isolation | David R. Greenberg, Amlan Majumdar, Leathen Shi, Jeng-Bang Yau | 2014-11-04 |
| 8859302 | Structure and method for adjusting threshold voltage of the array of transistors | Ali Khakifirooz, Jin Cai, Kangguo Cheng, Tak H. Ning | 2014-10-14 |
| 8847348 | Complementary bipolar inverter | Jin Cai, Wilfried E. Haensch, Tak H. Ning | 2014-09-30 |
| 8815684 | Bulk finFET with super steep retrograde well | Jin Cai, Kevin K. Chan, Bruce B. Doris, Barry P. Linder, Ramachandran Muralidhar +1 more | 2014-08-26 |
| 8754672 | Voltage conversion and integrated circuits with stacked voltage domains | Brian L. Ji | 2014-06-17 |
| 8735990 | Radiation hardened FinFET | Brent A. Anderson, Mark C. Hakey, Edward J. Nowak | 2014-05-27 |