Issued Patents All Time
Showing 1–25 of 118 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12114581 | Magnesium ion based synaptic device | Douglas M. Bishop, Teodor K. Todorov | 2024-10-08 |
| 11889771 | Mitigating moisture driven degradation of silicon doped chalcogenides | Cheng-Wei Cheng, Huai-Yu Cheng, I-Ting Kuo, Robert L. Bruce, Hiroyuki Miyazoe | 2024-01-30 |
| 11690304 | Magnesium ion based synaptic device | Douglas M. Bishop, Teodor K. Todorov | 2023-06-27 |
| 11646199 | Sub-stoichiometric metal-oxide thin films | John Rozen, Yohei Ogawa | 2023-05-09 |
| 11508438 | RRAM filament location based on NIR emission | Franco Stellari, Takashi Ando, Cyril Cabral, Jr., Eduard A. Cartier, Peilin Song +1 more | 2022-11-22 |
| 11462398 | Ligand selection for ternary oxide thin films | John Rozen, Yohei Ogawa | 2022-10-04 |
| 11362274 | Laterally switching cell having sub-stoichiometric metal oxide active layer | John Rozen, Takashi Ando, Yohei Ogawa | 2022-06-14 |
| 11244999 | Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS back-end | Takashi Ando, Xiao Sun, Jin-Ping Han, Vijay Narayanan | 2022-02-08 |
| 11201284 | Magnesium ion based synaptic device | Douglas M. Bishop, Teodor K. Todorov | 2021-12-14 |
| 11195089 | Multi-terminal cross-point synaptic device using nanocrystal dot structures | Kevin K. Chan, Jin-Ping Han | 2021-12-07 |
| 11152214 | Structures and methods for equivalent oxide thickness scaling on silicon germanium channel or III-V channel of semiconductor device | Takashi Ando, John Bruley, Eduard A. Cartier, Vijay Narayanan, John Rozen | 2021-10-19 |
| 11121139 | Hafnium oxide and zirconium oxide based ferroelectric devices with textured iridium bottom electrodes | — | 2021-09-14 |
| 11107835 | BEOL cross-bar array ferroelectric synapse units for domain wall movement | Jin-Ping Han, Ramachandran Muralidhar, Paul M. Solomon, Dennis M. Newns | 2021-08-31 |
| 11081343 | Sub-stoichiometric metal-oxide thin films | John Rozen, Yohei Ogawa | 2021-08-03 |
| 11068777 | Voltage controlled highly linear resistive elements | Stephen W. Bedell, Devendra K. Sadana | 2021-07-20 |
| 11062204 | Voltage controlled highly linear resistive elements | Stephen W. Bedell, Devendra K. Sadana | 2021-07-13 |
| 11055612 | Voltage controlled highly linear resistive elements | Stephen W. Bedell, Devendra K. Sadana | 2021-07-06 |
| 10833150 | Fast recrystallization of hafnium or zirconium based oxides in insulator-metal structures | Kam-Leung Lee, Eduard A. Cartier, Vijay Narayanan, Jean Fompeyrine, Stefan Abel +2 more | 2020-11-10 |
| 10755759 | Symmetrically programmable resistive synapse for RPU using current-programmed single domain wall ferroelectric | Jin-Ping Han, Dennis M. Newns, Paul M. Solomon, Xiao Sun | 2020-08-25 |
| 10686040 | Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS front-end | Takashi Ando, Xiao Sun, Jin-Ping Han, Vijay Narayanan | 2020-06-16 |
| 10686039 | Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS front-end | Takashi Ando, Xiao Sun, Jin-Ping Han, Vijay Narayanan | 2020-06-16 |
| 10672881 | Ferroelectric gate dielectric with scaled interfacial layer for steep sub-threshold slope field-effect transistor | Takashi Ando, Vijay Narayanan | 2020-06-02 |
| 10672671 | Distinct gate stacks for III-V-based CMOS circuits comprising a channel cap | Takashi Ando, Renee T. Mo, Vijay Narayanan | 2020-06-02 |
| 10635970 | Racetrack synapse for neuromorphic applications | Jin-Ping Han, Masatoshi Ishii, Timothy Phung, Aakash Pushp | 2020-04-28 |
| 10615250 | Tapered metal nitride structure | Hiroyuki Miyazoe, Vijay Narayanan | 2020-04-07 |