Issued Patents All Time
Showing 51–75 of 118 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9859279 | High-k gate dielectric and metal gate conductor stack for fin-type field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor material | Takashi Ando, Pranita Kerber, Vijay Narayanan | 2018-01-02 |
| 9831084 | Hydroxyl group termination for nucleation of a dielectric metallic oxide | Takashi Ando, Michael P. Chudzik, Min Dai, David F. Hilscher, Rishikesh Krishnan +3 more | 2017-11-28 |
| 9806265 | Heterogeneous nanostructures for hierarchal assembly | Shu-Jen Han, George S. Tulevski | 2017-10-31 |
| 9793397 | Ferroelectric gate dielectric with scaled interfacial layer for steep sub-threshold slope field-effect transistor | Takashi Ando, Vijay Narayanan | 2017-10-17 |
| 9590100 | Semiconductor devices containing an epitaxial perovskite/doped strontium titanate structure | Catherine A. Dubourdieu, Vijay Narayanan | 2017-03-07 |
| 9564505 | Changing effective work function using ion implantation during dual work function metal gate integration | Michael P. Chudzik, Herbert L. Ho, Mark J. Hurley, Rashmi Jha, Naim Moumen +3 more | 2017-02-07 |
| 9472553 | High-K gate dielectric and metal gate conductor stack for planar field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor material | Takashi Ando, Pranita Kerber, Vijay Narayanan | 2016-10-18 |
| 9466492 | Method of lateral oxidation of NFET and PFET high-K gate stacks | Takashi Ando, Robert H. Dennard | 2016-10-11 |
| 9373501 | Hydroxyl group termination for nucleation of a dielectric metallic oxide | Takashi Ando, Michael P. Chudzik, Min Dai, David F. Hilscher, Rishikesh Krishnan +3 more | 2016-06-21 |
| 9362282 | High-K gate dielectric and metal gate conductor stack for planar field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor material | Takashi Ando, Pranita Kerber, Vijay Narayanan | 2016-06-07 |
| 9299799 | Semiconductor devices containing an epitaxial perovskite/doped strontium titanate structure | Catherine A. Dubourdieu, Vijay Narayanan | 2016-03-29 |
| 9287358 | Stressed nanowire stack for field effect transistor | Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2016-03-15 |
| 9166014 | Gate electrode with stabilized metal semiconductor alloy-semiconductor stack | Nicolas L. Breil, Cyril Cabral, Jr., Claude Ortolland | 2015-10-20 |
| 9159920 | Phase change material cell with piezoelectric or ferroelectric stress inducer liner | Catherine A. Dubourdieu, Bipin Rajendran, Alejandro G. Schrott | 2015-10-13 |
| 9105745 | Fabrication of low threshold voltage and inversion oxide thickness scaling for a high-k metal gate p-type MOSFET | Takashi Ando, Changhwan Choi, Unoh Kwon, Vijay Narayanan | 2015-08-11 |
| 9041082 | Engineering multiple threshold voltages in an integrated circuit | Catherine A. Dubourdieu, Vijay Narayanan | 2015-05-26 |
| 9034749 | Gate electrode with stabilized metal semiconductor alloy-semiconductor stack | Nicolas L. Breil, Cyril Cabral, Jr., Claude Ortolland | 2015-05-19 |
| 8941169 | Floating gate device with oxygen scavenging element | — | 2015-01-27 |
| 8927409 | High-k transistors with low threshold voltage | — | 2015-01-06 |
| 8928064 | Gate stack of boron semiconductor alloy, polysilicon and high-K gate dielectric for low voltage applications | Isaac Lauer, Jeffrey W. Sleight | 2015-01-06 |
| 8912061 | Floating gate device with oxygen scavenging element | — | 2014-12-16 |
| 8901616 | Gate stack including a high-K gate dielectric that is optimized for low voltage applications | Isaac Lauer, Jeffrey W. Sleight | 2014-12-02 |
| 8900952 | Gate stack including a high-k gate dielectric that is optimized for low voltage applications | Isaac Lauer, Jeffrey W. Sleight | 2014-12-02 |
| 8890112 | Controlling ferroelectricity in dielectric films by process induced uniaxial strain | Catherine A. Dubourdieu | 2014-11-18 |
| 8865551 | Reducing the inversion oxide thickness of a high-k stack fabricated on high mobility semiconductor material | Takashi Ando, Vijay Narayanan | 2014-10-21 |