MF

Martin M. Frank

IBM: 114 patents #453 of 70,183Top 1%
CN CNRS: 3 patents #978 of 11,908Top 9%
UL Ulvac: 3 patents #134 of 680Top 20%
AS Agere Systems: 2 patents #639 of 1,849Top 35%
Globalfoundries: 2 patents #1,397 of 4,424Top 35%
MC Macronix International Co.: 1 patents #718 of 1,241Top 60%
📍 Dobbs Ferry, NY: #1 of 324 inventorsTop 1%
🗺 New York: #401 of 115,490 inventorsTop 1%
Overall (All Time): #10,324 of 4,157,543Top 1%
118
Patents All Time

Issued Patents All Time

Showing 101–118 of 118 patents

Patent #TitleCo-InventorsDate
7928514 Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectrics Nestor A. Bojarczuk, Cyril Cabral, Jr., Eduard A. Cartier, Matthew W. Copel, Evgeni Gousev +4 more 2011-04-19
7902620 Suspended germanium photodetector for silicon waveguide Solomon Assefa, Jack O. Chu, William M. Green, Young-Hee Kim, George G. Totir +3 more 2011-03-08
7868410 Gate stack engineering by electrochemical processing utilizing through-gate-dielectric current flow Philippe M. Vereecken, Veeraraghavan S. Basker, Cyril Cabral, Jr., Emanuel I. Cooper, Hariklia Deligianni +4 more 2011-01-11
7858500 Low threshold voltage semiconductor device with dual threshold voltage control means Eduard A. Cartier, Matthew W. Copel, Evgeni Gousev, Paul C. Jamison, Rajarao Jammy +2 more 2010-12-28
7838908 Semiconductor device having dual metal gates and method of manufacture Unoh Kwon, Siddarth A. Krishnan, Takashi Ando, Michael P. Chudzik, William K. Henson +5 more 2010-11-23
7745278 Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high K dielectrics Nestor A. Bojarczuk, Cyril Cabral, Jr., Eduard A. Cartier, Matthew W. Copel, Evgeni Gousev +4 more 2010-06-29
7718496 Techniques for enabling multiple Vt devices using high-K metal gate stacks Arvind Kumar, Vijay Narayanan, Vamsi K. Paruchuri, Jeffrey W. Sleight 2010-05-18
7655994 Low threshold voltage semiconductor device with dual threshold voltage control means Eduard A. Cartier, Mathew W. Copel, Evgeni Gousev, Paul C. Jamison, Rajarao Jammy +2 more 2010-02-02
7560361 Method of forming gate stack for semiconductor electronic device Alexander Reznicek, Evgeni Gousev, Eduard A. Cartier 2009-07-14
7521346 Method of forming HfSiN metal for n-FET applications Alessandro C. Callegari, Rajarao Jammy, Dianne L. Lacey, Fenton R. McFeely, Sufi Zafar 2009-04-21
7521376 Method of forming a semiconductor structure using a non-oxygen chalcogen passivation treatment Steven J. Koester, John A. Ott, Huiling Shang 2009-04-21
7479683 Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectrics Nestor A. Bojarczuk, Cyril Cabral, Jr., Eduard A. Cartier, Matthew W. Copel, Evgeni Gousev +4 more 2009-01-20
7452767 Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high k dielectrics Nestor A. Bojarczuk, Cyril Cabral, Jr., Eduard A. Cartier, Matthew W. Copel, Evgeni Gousev +4 more 2008-11-18
7368045 Gate stack engineering by electrochemical processing utilizing through-gate-dielectric current flow Philippe M. Vereecken, Veeraraghavan S. Basker, Cyril Cabral, Jr., Emanuel I. Cooper, Hariklia Deligianni +4 more 2008-05-06
7242055 Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxide Nestor A. Bojarczuk, Cyril Cabral, Jr., Eduard A. Cartier, Evgeni Gousev, Supratik Guha +4 more 2007-07-10
7223677 Process for fabricating a semiconductor device having an insulating layer formed over a semiconductor substrate Yves Chabal, Glen Wilk, Martin L. Green 2007-05-29
7105889 Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high k dielectrics Nestor A. Bojarczuk, Cyril Cabral, Jr., Eduard A. Cartier, Matthew W. Copel, Evgeni Gousev +4 more 2006-09-12
6825538 Semiconductor device using an insulating layer having a seed layer Yves Chabal, Glen Wilk 2004-11-30