Issued Patents All Time
Showing 76–100 of 118 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8859410 | Gate stack of boron semiconductor alloy, polysilicon and high-k gate dielectric for low voltage applications | Isaac Lauer, Jeffrey W. Sleight | 2014-10-14 |
| 8853751 | Reducing the inversion oxide thickness of a high-K stack fabricated on high mobility semiconductor material | Takashi Ando, Vijay Narayanan | 2014-10-07 |
| 8836048 | Field effect transistor device having a hybrid metal gate stack | Cyril Cabral, Jr., Josephine B. Chang, Michael P. Chudzik, Michael A. Guillorn, Christian Lavoie +2 more | 2014-09-16 |
| 8836037 | Structure and method to form input/output devices | Takashi Ando, Min Dai, Barry P. Linder, Shahab Siddiqui | 2014-09-16 |
| 8802527 | Gate electrode optimized for low voltage operation | Isaac Lauer, Jeffrey W. Sleight | 2014-08-12 |
| 8785995 | Ferroelectric semiconductor transistor devices having gate modulated conductive layer | Catherine A. Dubourdieu, David J. Frank, Vijay Narayanan, Paul M. Solomon, Thomas Theis | 2014-07-22 |
| 8778759 | Gate electrode optimized for low voltage operation | Isaac Lauer, Jeffrey W. Sleight | 2014-07-15 |
| 8753936 | Changing effective work function using ion implantation during dual work function metal gate integration | Michael P. Chudzik, Herbert L. Ho, Mark J. Hurley, Rashmi Jha, Naim Moumen +3 more | 2014-06-17 |
| 8716807 | Fabrication of devices having different interfacial oxide thickness via lateral oxidation | Jin Cai, Eduard A. Cartier, Marwan H. Khater | 2014-05-06 |
| 8680623 | Techniques for enabling multiple Vt devices using high-K metal gate stacks | Arvind Kumar, Vijay Narayanan, Vamsi K. Paruchuri, Jeffrey W. Sleight | 2014-03-25 |
| 8674456 | High-K transistors with low threshold voltage | — | 2014-03-18 |
| 8598027 | High-K transistors with low threshold voltage | — | 2013-12-03 |
| 8598665 | Controlling threshold voltage in carbon based field effect transistors | Dechao Guo, Shu-Jen Hen, Kuen-Ting Shiu | 2013-12-03 |
| 8559217 | Phase change material cell with stress inducer liner | Catherine A. Dubourdieu, Bipin Rajendran, Alejandro G. Schrott | 2013-10-15 |
| 8541867 | Metal insulator metal structure with remote oxygen scavenging | — | 2013-09-24 |
| 8541842 | High-k transistors with low threshold voltage | — | 2013-09-24 |
| 8420474 | Controlling threshold voltage in carbon based field effect transistors | Dechao Guo, Shu-Jen Hen, Kuen-Ting Shiu | 2013-04-16 |
| 8415677 | Field-effect transistor device having a metal gate stack with an oxygen barrier layer | Praneet Adusumilli, Alessandro C. Callegari, Josephine B. Chang, Changhwan Choi, Michael A. Guillorn +1 more | 2013-04-09 |
| 8389300 | Controlling ferroelectricity in dielectric films by process induced uniaxial strain | Catherine A. Dubourdieu | 2013-03-05 |
| 8367496 | Scavanging metal stack for a high-k gate dielectric | Takashi Ando, Changhwan Choi, Vijay Narayanan | 2013-02-05 |
| 8304306 | Fabrication of devices having different interfacial oxide thickness via lateral oxidation | Jin Cai, Eduard A. Cartier, Marwan H. Khater | 2012-11-06 |
| 8212322 | Techniques for enabling multiple Vt devices using high-K metal gate stacks | Arvind Kumar, Vijay Narayanan, Vamsi K. Paruchuri, Jeffrey W. Sleight | 2012-07-03 |
| 8193051 | Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectrics | Nestor A. Bojarczuk, Cyril Cabral, Jr., Eduard A. Cartier, Matthew W. Copel, Evgeni Gousev +4 more | 2012-06-05 |
| 8178382 | Suspended germanium photodetector for silicon waveguide | Solomon Assefa, Jack O. Chu, William M. Green, Young-Hee Kim, George G. Totir +3 more | 2012-05-15 |
| 7989902 | Scavenging metal stack for a high-k gate dielectric | Takashi Ando, Changhwan Choi, Vijay Narayanan | 2011-08-02 |