| 10755949 |
Structures, methods and applications for electrical pulse anneal processes |
Michel J. Abou-Khalil, Robert J. Gauthier, Jr., Junjun Li, Souvick Mitra, Christopher S. Putnam +1 more |
2020-08-25 |
|
| 10297589 |
Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diode |
Robert J. Gauthier, Jr., You Li, Rahul Mishra, Souvick Mitra, Andreas Scholze |
2019-05-21 |
$28,367,000 |
| 10283374 |
Structures, methods and applications for electrical pulse anneal processes |
Michel J. Abou-Khalil, Robert J. Gauthier, Jr., Junjun Li, Souvick Mitra, Christopher S. Putnam +1 more |
2019-05-07 |
$2,760,000 |
| 10109599 |
Integrated circuit structure with continuous metal crack stop |
Cathryn J. Christiansen, Anthony K. Stamper, Ian McCallum-Cook |
2018-10-23 |
$13,099,000 |
| 10037895 |
Structures, methods and applications for electrical pulse anneal processes |
Michel J. Abou-Khalil, Robert J. Gauthier, Jr., Junjun Li, Souvick Mitra, Christopher S. Putnam +1 more |
2018-07-31 |
$5,084,000 |
| 9881810 |
Structures, methods and applications for electrical pulse anneal processes |
Michel J. Abou-Khalil, Robert J. Gauthier, Jr., Junjun Li, Souvick Mitra, Christopher S. Putnam +1 more |
2018-01-30 |
$2,622,000 |
| 9831194 |
Edge compression layers |
Cathryn J. Christiansen, Ian McCallum-Cook, Anthony K. Stamper |
2017-11-28 |
$8,975,000 |
| 9704852 |
Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diode |
Robert J. Gauthier, Jr., You Li, Rahul Mishra, Souvick Mitra, Andreas Scholze |
2017-07-11 |
$13,027,000 |
| 9685370 |
Titanium tungsten liner used with copper interconnects |
Jonathan D. Chapple-Sokol, Cathryn J. Christiansen, Jeffrey P. Gambino, William J. Murphy, Anthony K. Stamper |
2017-06-20 |
$14,558,000 |
| 9575115 |
Methodology of grading reliability and performance of chips across wafer |
Nathaniel R. Chadwick, James P. Di Sarro, Robert J. Gauthier, Jr., Junjun Li, Souvick Mitra +2 more |
2017-02-21 |
$8,671,000 |
| 9536870 |
SCR with fin body regions for ESD protection |
James P. Di Sarro, Robert J. Gauthier, Jr., Junjun Li, Souvick Mitra, Christopher S. Putnam |
2017-01-03 |
$6,197,000 |
| 9425185 |
Self-healing electrostatic discharge power clamp |
Robert J. Gauthier, Jr., Junjun Li, You Li, Souvick Mitra |
2016-08-23 |
$3,675,000 |
| 9413169 |
Electrostatic discharge protection circuit with a fail-safe mechanism |
James P. Di Sarro, Robert J. Gauthier, Jr., Junjun Li, Souvick Mitra, Christopher S. Putnam |
2016-08-09 |
$2,792,000 |
| 9391065 |
Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diode |
Robert J. Gauthier, Jr., You Li, Rahul Mishra, Souvick Mitra, Andreas Scholze |
2016-07-12 |
$2,207,000 |
| 9287345 |
Semiconductor structure with thin film resistor and terminal bond pad |
Fen Chen, Jeffrey P. Gambino, Zhong-Xiang He, John C. Malinowski, Anthony K. Stamper |
2016-03-15 |
$907,000 |
| 9240471 |
SCR with fin body regions for ESD protection |
James P. Di Sarro, Robert J. Gauthier, Jr., Junjun Li, Souvick Mitra, Christopher S. Putnam |
2016-01-19 |
$1,034,000 |
| 9070629 |
Through silicon via repair |
Michel J. Abou-Khalil, Robert J. Gauthier, Jr., Junjun Li, Souvick Mitra, Christopher S. Putnam |
2015-06-30 |
$3,617,000 |
| 9064786 |
Dual three-dimensional (3D) resistor and methods of forming |
James P. Di Sarro, Robert J. Gauthier, Jr., Junjun Li, Souvick Mitra, Christopher S. Putnam |
2015-06-23 |
$4,496,000 |
| 9006783 |
Silicon controlled rectifier with integral deep trench capacitor |
James P. Di Sarro, Robert J. Gauthier, Jr., Junjun Li, Souvick Mitra, Chengwen Pei +2 more |
2015-04-14 |
$3,567,000 |
| 8945955 |
Method of changing reflectance or resistance of a region in an optoelectronic memory device |
Fen Chen, Richard S. Kontra, Theodore M. Levin, Christopher D. Muzzy, Timothy D. Sullivan |
2015-02-03 |
$3,062,000 |
| 8940588 |
Bulk FinFET ESD devices |
Robert J. Gauthier, Jr., Junjun Li, Souvick Mitra, Christopher S. Putnam |
2015-01-27 |
$4,313,000 |
| 8912625 |
Semiconductor-on-insulator device with asymmetric structure |
Michel J. Abou-Khalil, Robert J. Gauthier, Jr., Junjun Li, Souvick Mitra, Christopher S. Putnam |
2014-12-16 |
$3,695,000 |
| 8890249 |
Bulk FinFET ESD device |
Robert J. Gauthier, Jr., Junjun Li, Souvick Mitra, Christopher S. Putnam |
2014-11-18 |
$3,249,000 |
| 8891212 |
RC-triggered semiconductor controlled rectifier for ESD protection of signal pads |
Michel J. Abou-Khalil, Robert J. Gauthier, Jr., Junjun Li, Souvick Mitra, Christopher S. Putnam |
2014-11-18 |
$3,249,000 |
| 8847354 |
Metal-insulator-metal capacitors with high capacitance density |
Michel J. Abou-Khalil, Robert J. Gauthier, Jr., Junjun Li, Souvick Mitra, Christopher S. Putnam +1 more |
2014-09-30 |
$5,320,000 |
