Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor-on-insulator device with asymmetric structure

Semiconductor-on-insulator device with asymmetric structure

US Patent 8912625 · Granted Dec 16, 2014

Estimated economic value: $3,695,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Electronically programmable fuse with heating transistors2025
Vertically integrated SCR structure with SOI-based raised trigger element2025
Electrostatic discharge protection devices2025
Electrostatic discharge protection devices including a silicon-controlled rectif2025
High-mobility-electron transistors having heat dissipating structures2025
Field-effect transistors having a gate electrode positioned inside a substrate r2025
Integrated circuit structure with diode over lateral bipolar transistor2025
Vertically stacked diode-trigger silicon controlled rectifier2024
Fin-based and bipolar electrostatic discharge devices2024
Fin-based and bipolar electrostatic discharge devices2024
Bipolar transistors2024
Integrated circuit structure with avalanche junction to doped semiconductor over2024