Issued Patents All Time
Showing 1–25 of 26 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12364164 | Reactive serial resistance reduction for magnetoresistive random-access memory devices | Guohan Hu, Stephen L. Brown, Alexander Reznicek | 2025-07-15 |
| D1082613 | Motor vehicle, toy replica, and/or other replica | Denis Di Pardo, Michael Gebhardt, Kai Sieber, Gorden Wagener | 2025-07-08 |
| 12108686 | Paramagnetic hexagonal metal phase coupling spacer | Alexander Reznicek, Stephen L. Brown | 2024-10-01 |
| 11569438 | Magnetoresistive random-access memory device | Alexander Reznicek, Pouya Hashemi, Bruce B. Doris | 2023-01-31 |
| 11487508 | Magnetic tunnel junction based true random number generator | Rasit Onur Topaloglu, Jonathan Zanhong Sun, Chandrasekharan Kothandaraman | 2022-11-01 |
| 11309479 | Computing devices containing magnetic Josephson Junctions with embedded magnetic field control element | Steven J. Holmes, Bruce B. Doris, Rajiv V. Joshi, Sudipto Chakraborty | 2022-04-19 |
| 11302372 | MTJ stack containing a top magnetic pinned layer having strong perpendicular magnetic anisotropy | Seonghoon Woo | 2022-04-12 |
| 11251360 | MTJ capping layer structure for improved write error rate slopes and thermal stability | — | 2022-02-15 |
| 10937828 | Fabricating embedded magnetoresistive random access memory device with v-shaped magnetic tunnel junction profile | Pouya Hashemi, Alexander Reznicek, Chandrasekharan Kothandaraman | 2021-03-02 |
| 10804319 | Top pinned MTJ stack with synthetic anti-ferromagnetic free layer and AlN seed layer | — | 2020-10-13 |
| 10692927 | Double MTJ stack with synthetic anti-ferromagnetic free layer and AlN bottom barrier layer | — | 2020-06-23 |
| 10340446 | Semiconductor structure multilayers having a dusting material at an interface between a non-magnetic layer and a magnetic layer | — | 2019-07-02 |
| 10134808 | Magnetic tunnel junction (MTJ) devices with heterogeneous free layer structure, particularly suited for spin-torque-transfer (STT) magnetic random access memory (MRAM) (STT MRAM) | Jimmy Jianan Kan, Chando Park, Seung H. Kang | 2018-11-20 |
| 10103319 | Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices | Kangho Lee, Jimmy Jianan Kan, Xiaochun Zhu, Chando Park, Seung H. Kang | 2018-10-16 |
| 10079337 | Double magnetic tunnel junction with dynamic reference layer | Guohan Hu | 2018-09-18 |
| 9728718 | Magnetic tunnel junction (MTJ) device array | Vladimir Machkaoutsan, Mustafa Badaroglu, Jimmy Jianan Kan, Kangho Lee, Yu Lu +1 more | 2017-08-08 |
| 9634237 | Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices | Kangho Lee, Jimmy Jianan Kan, Xiaochun Zhu, Chando Park, Seung H. Kang | 2017-04-25 |
| 9620706 | Magnetic etch stop layer for spin-transfer torque magnetoresistive random access memory magnetic tunnel junction device | Kangho Lee, Chando Park, Jimmy Jianan Kan, Xiaochun Zhu, Seung H. Kang | 2017-04-11 |
| 9595666 | Method of fabricating smooth seed layers with uniform crystalline texture for high perpendicular magnetic anisotropy materials | Jimmy Jianan Kan, Kangho Lee, Chando Park, Seung H. Kang | 2017-03-14 |
| 9590010 | Perpendicular magnetic tunnel junction (pMTJ) devices employing a thin pinned layer stack and providing a transitioning start to a body-centered cubic (BCC) crystalline / amorphous structure below an upper anti-parallel (AP) layer | Jimmy Jianan Kan, Chando Park, Xiaochun Zhu, Seung H. Kang | 2017-03-07 |
| 9583696 | Reference layer for perpendicular magnetic anisotropy magnetic tunnel junction | Chando Park, Xiaochun Zhu, Kangho Lee, Seung H. Kang | 2017-02-28 |
| 9570509 | Magnetic tunnel junction (MTJ) device array | Vladimir Machkaoutsan, Mustafa Badaroglu, Jimmy Jianan Kan, Kangho Lee, Yu Lu +1 more | 2017-02-14 |
| 9548446 | Synthetic antiferromagnet (SAF) coupled free layer for perpendicular magnetic tunnel junction (P-MTJ) | Chando Park, Kangho Lee, Seung H. Kang | 2017-01-17 |
| 9444035 | Magnesium oxide capping with a shorted path for perpendicular magnetic tunnel junction devices and method for fabrication | Chando Park, Kangho Lee, Jimmy Jianan Kan, Xiaochun Zhu, Seung H. Kang | 2016-09-13 |
| 9385309 | Smooth seed layers with uniform crystalline texture for high perpendicular magnetic anisotropy materials | Jimmy Jianan Kan, Kangho Lee, Chando Park, Seung H. Kang | 2016-07-05 |