Issued Patents All Time
Showing 1–25 of 30 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10347821 | Electrode structure for resistive memory device | Junjing Bao, Xia Li, Seung H. Kang | 2019-07-09 |
| 10109674 | Semiconductor metallization structure | Seung H. Kang | 2018-10-23 |
| 10043967 | Self-compensation of stray field of perpendicular magnetic elements | Wei-Chuan Chen, Xiaochun Zhu, Xia Li, Chando Park, Seung H. Kang | 2018-08-07 |
| 10008537 | Complementary magnetic tunnel junction (MTJ) bit cell with shared bit line | Xia Li, Xiaochun Zhu | 2018-06-26 |
| 9865798 | Electrode structure for resistive memory device | Junjing Bao, Xia Li, Seung H. Kang | 2018-01-09 |
| 9728718 | Magnetic tunnel junction (MTJ) device array | Vladimir Machkaoutsan, Matthias Georg Gottwald, Mustafa Badaroglu, Jimmy Jianan Kan, Kangho Lee +1 more | 2017-08-08 |
| 9721634 | Decoupling of source line layout from access transistor contact placement in a magnetic tunnel junction (MTJ) memory bit cell to facilitate reduced contact resistance | Xiaochun Zhu, Chando Park, Seung H. Kang | 2017-08-01 |
| 9704919 | High aspect ratio vertical interconnect access (via) interconnections in magnetic random access memory (MRAM) bit cells | Wei-Chuan Chen, Jimmy Jianan Kan, Seung H. Kang | 2017-07-11 |
| 9666792 | Shadow-effect compensated fabrication of magnetic tunnel junction (MTJ) elements | Wei-Chuan Chen, Chando Park, Seung H. Kang | 2017-05-30 |
| 9647037 | Resistive random access memory device with resistance-based storage element and method of fabricating same | Xia Li, Seung H. Kang | 2017-05-09 |
| 9614143 | De-integrated trench formation for advanced MRAM integration | Wei-Chuan Chen, Seung H. Kang | 2017-04-04 |
| 9595662 | MRAM integration techniques for technology scaling | Xia Li, Seung H. Kang | 2017-03-14 |
| 9576801 | High dielectric constant/metal gate (HK/MG) compatible floating gate (FG)/ferroelectric dipole non-volatile memory | Xia Li, Jeffrey Junhao Xu, Zhongze Wang, Bin Yang, Xiaonan Chen | 2017-02-21 |
| 9570509 | Magnetic tunnel junction (MTJ) device array | Vladimir Machkaoutsan, Matthias Georg Gottwald, Mustafa Badaroglu, Jimmy Jianan Kan, Kangho Lee +1 more | 2017-02-14 |
| 9548333 | MRAM integration with low-K inter-metal dielectric for reduced parasitic capacitance | Xia Li, Seung H. Kang | 2017-01-17 |
| 9548096 | Reverse complement magnetic tunnel junction (MTJ) bit cells employing shared source lines, and related methods | Xia Li, Xiaochun Zhu | 2017-01-17 |
| 9524765 | Differential magnetic tunnel junction pair including a sense layer with a high coercivity portion | Seung H. Kang | 2016-12-20 |
| 9508439 | Non-volatile multiple time programmable memory device | Xia Li, Jeffrey Junhao Xu, Xiao Lu, Matthew Michael Nowak, Seung H. Kang +2 more | 2016-11-29 |
| 9502469 | Electrically reconfigurable interposer with built-in resistive memory | Vidhya Ramachandran, Seung H. Kang | 2016-11-22 |
| 9496314 | Shared source line magnetic tunnel junction (MTJ) bit cells employing uniform MTJ connection patterns for reduced area | Xiaochun Zhu, Xia Li, Seung H. Kang | 2016-11-15 |
| 9490424 | Sub-lithographic patterning of magnetic tunneling junction devices | — | 2016-11-08 |
| 9461094 | Switching film structure for magnetic random access memory (MRAM) cell | Xia Li, Wei-Chuan Chen, Kangho Lee, Seung H. Kang | 2016-10-04 |
| 9437272 | Multi-bit spin torque transfer magnetoresistive random access memory with sub-arrays | Xia Li | 2016-09-06 |
| 9406875 | MRAM integration techniques for technology scaling | Xia Li, Seung H. Kang | 2016-08-02 |
| 9362336 | Sub-lithographic patterning of magnetic tunneling junction devices | — | 2016-06-07 |