Issued Patents All Time
Showing 1–23 of 23 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10833254 | Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memory | Chando Park, Peiyuan Wang, Seung H. Kang | 2020-11-10 |
| 10547460 | Message-based key generation using physical unclonable function (PUF) | Peiyuan Wang, Chando Park, Seung H. Kang | 2020-01-28 |
| 10431734 | Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memory | Chando Park, Peiyuan Wang, Seung H. Kang | 2019-10-01 |
| 10381060 | High-speed, low power spin-orbit torque (SOT) assisted spin-transfer torque magnetic random access memory (STT-MRAM) bit cell array | Chando Park, Peiyuan Wang, Sungryul Kim, Seung H. Kang | 2019-08-13 |
| 10224368 | Voltage-switched magneto-resistive random access memory (MRAM) employing separate read operation circuit paths from a shared spin torque write operation circuit path | Xia Li, Seung H. Kang, Bin Yang, Gengming Tao | 2019-03-05 |
| 10134808 | Magnetic tunnel junction (MTJ) devices with heterogeneous free layer structure, particularly suited for spin-torque-transfer (STT) magnetic random access memory (MRAM) (STT MRAM) | Chando Park, Matthias Georg Gottwald, Seung H. Kang | 2018-11-20 |
| 10103319 | Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices | Kangho Lee, Xiaochun Zhu, Matthias Georg Gottwald, Chando Park, Seung H. Kang | 2018-10-16 |
| 10096649 | Reducing or avoiding metal deposition from etching magnetic tunnel junction (MTJ) devices, including magnetic random access memory (MRAM) devices | Chando Park, Seung H. Kang | 2018-10-09 |
| 9870811 | Physically unclonable function based on comparison of MTJ resistances | Peiyuan Wang, Jung Pill Kim, Chando Park, Seung H. Kang | 2018-01-16 |
| 9824735 | System and method to generate a random number | Chando Park, Peiyuan Wang, Seung H. Kang | 2017-11-21 |
| 9813049 | Comparator including a magnetic tunnel junction (MTJ) device and a transistor | Manu Rastogi, Kangho Lee, Seung H. Kang | 2017-11-07 |
| 9728718 | Magnetic tunnel junction (MTJ) device array | Vladimir Machkaoutsan, Matthias Georg Gottwald, Mustafa Badaroglu, Kangho Lee, Yu Lu +1 more | 2017-08-08 |
| 9704919 | High aspect ratio vertical interconnect access (via) interconnections in magnetic random access memory (MRAM) bit cells | Yu Lu, Wei-Chuan Chen, Seung H. Kang | 2017-07-11 |
| 9646670 | Spin-orbit-torque magnetoresistive random access memory with voltage-controlled anisotropy | Kangho Lee, Seung H. Kang | 2017-05-09 |
| 9634237 | Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices | Kangho Lee, Xiaochun Zhu, Matthias Georg Gottwald, Chando Park, Seung H. Kang | 2017-04-25 |
| 9620706 | Magnetic etch stop layer for spin-transfer torque magnetoresistive random access memory magnetic tunnel junction device | Kangho Lee, Chando Park, Matthias Georg Gottwald, Xiaochun Zhu, Seung H. Kang | 2017-04-11 |
| 9595917 | Antiferromagnetically coupled spin-torque oscillator with hard perpendicular polarizer | Kangho Lee, Seung H. Kang | 2017-03-14 |
| 9595666 | Method of fabricating smooth seed layers with uniform crystalline texture for high perpendicular magnetic anisotropy materials | Matthias Georg Gottwald, Kangho Lee, Chando Park, Seung H. Kang | 2017-03-14 |
| 9590010 | Perpendicular magnetic tunnel junction (pMTJ) devices employing a thin pinned layer stack and providing a transitioning start to a body-centered cubic (BCC) crystalline / amorphous structure below an upper anti-parallel (AP) layer | Matthias Georg Gottwald, Chando Park, Xiaochun Zhu, Seung H. Kang | 2017-03-07 |
| 9589619 | Spin-orbit-torque magnetoresistive random access memory with voltage-controlled anisotropy | Kangho Lee, Seung H. Kang | 2017-03-07 |
| 9570509 | Magnetic tunnel junction (MTJ) device array | Vladimir Machkaoutsan, Matthias Georg Gottwald, Mustafa Badaroglu, Kangho Lee, Yu Lu +1 more | 2017-02-14 |
| 9444035 | Magnesium oxide capping with a shorted path for perpendicular magnetic tunnel junction devices and method for fabrication | Chando Park, Kangho Lee, Matthias Georg Gottwald, Xiaochun Zhu, Seung H. Kang | 2016-09-13 |
| 9385309 | Smooth seed layers with uniform crystalline texture for high perpendicular magnetic anisotropy materials | Matthias Georg Gottwald, Kangho Lee, Chando Park, Seung H. Kang | 2016-07-05 |