| 12201030 |
Spin-orbit torque MRAM structure and manufacture thereof |
Minrui Yu, Wenhui Wang, Jaesoo Ahn, Jong Mun Kim, Sahil Patel +5 more |
2025-01-14 |
|
| 12075628 |
Magnetic memory devices and methods of formation |
Lin Xue, Jaesoo Ahn, Hsin-wei Tseng, Mahendra Pakala |
2024-08-27 |
$120,173,000 |
| 11818959 |
Methods for forming structures for MRAM applications |
Hsin-wei Tseng, Jaesoo Ahn, Lin Xue, Mahendra Pakala |
2023-11-14 |
$33,075,000 |
| 11723283 |
Spin-orbit torque MRAM structure and manufacture thereof |
Minrui Yu, Wenhui Wang, Jaesoo Ahn, Jong Mun Kim, Sahil Patel +5 more |
2023-08-08 |
$46,911,000 |
| 11621393 |
Top buffer layer for magnetic tunnel junction application |
Lin Xue, Chi Hong Ching, Jaesoo Ahn, Mahendra Pakala |
2023-04-04 |
$41,324,000 |
| 11522126 |
Magnetic tunnel junctions with protection layers |
Lin Xue, Jaesoo Ahn, Sahil Patel, Mahendra Pakala |
2022-12-06 |
$44,170,000 |
| 11145808 |
Methods for etching a structure for MRAM applications |
Jong Mun Kim, Minrui Yu, Mang-Mang Ling, Jaesoo Ahn, Chentsau Chris Ying +3 more |
2021-10-12 |
$163,741,000 |
| 11069853 |
Methods for forming structures for MRAM applications |
Hsin-wei Tseng, Jaesoo Ahn, Lin Xue, Mahendra Pakala |
2021-07-20 |
$88,311,000 |
| 10923652 |
Top buffer layer for magnetic tunnel junction application |
Lin Xue, Chi Hong Ching, Jaesoo Ahn, Mahendra Pakala |
2021-02-16 |
$36,444,000 |
| 10833254 |
Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memory |
Jimmy Jianan Kan, Peiyuan Wang, Seung H. Kang |
2020-11-10 |
$31,067,000 |
| 10756259 |
Spin orbit torque MRAM and manufacture thereof |
Jaesoo Ahn, Hsin-wei Tseng, Lin Xue, Mahendra Pakala |
2020-08-25 |
$29,525,000 |
| 10740017 |
Dynamic memory protection |
Wei-Chuan Chen, Sungryul Kim, Adam E. Newham, Seung H. Kang, Rashid Ahmed Akbar Attar |
2020-08-11 |
$24,684,000 |
| 10636962 |
Spin-orbit torque (SOT) magnetic tunnel junction (MTJ) (SOT-MTJ) devices employing perpendicular and in-plane free layer magnetic anisotropy to facilitate perpendicular magnetic orientation switching, suitable for use in memory systems for storing data |
Sungryul Kim, Seung H. Kang |
2020-04-28 |
$12,560,000 |
| 10547460 |
Message-based key generation using physical unclonable function (PUF) |
Peiyuan Wang, Jimmy Jianan Kan, Seung H. Kang |
2020-01-28 |
$18,500,000 |
| 10483457 |
Differential spin orbit torque magnetic random access memory (SOT-MRAM) cell structure and array |
Hochul Lee, Seung H. Kang |
2019-11-19 |
$11,666,000 |
| 10460780 |
Magneto-resistive random access memory (MRAM) employing an integrated physically unclonable function (PUF) memory |
Sungryul Kim, Seung H. Kang |
2019-10-29 |
$17,058,000 |
| 10460785 |
Parallel write scheme utilizing spin hall effect-assisted spin transfer torque random access memory |
Hochul Lee, Seung H. Kang |
2019-10-29 |
$17,058,000 |
| 10431734 |
Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memory |
Jimmy Jianan Kan, Peiyuan Wang, Seung H. Kang |
2019-10-01 |
$14,181,000 |
| 10381060 |
High-speed, low power spin-orbit torque (SOT) assisted spin-transfer torque magnetic random access memory (STT-MRAM) bit cell array |
Jimmy Jianan Kan, Peiyuan Wang, Sungryul Kim, Seung H. Kang |
2019-08-13 |
$16,216,000 |
| 10311930 |
One-time programming (OTP) magneto-resistive random access memory (MRAM) bit cells in a physically unclonable function (PUF) memory in breakdown to a memory state from a previous read operation to provide PUF operations |
Sungryul Kim, Seung H. Kang |
2019-06-04 |
$14,525,000 |
| 10249814 |
Dynamic memory protection |
Seung H. Kang, Sungryul Kim, Wei-Chuan Chen |
2019-04-02 |
$8,975,000 |
| 10134808 |
Magnetic tunnel junction (MTJ) devices with heterogeneous free layer structure, particularly suited for spin-torque-transfer (STT) magnetic random access memory (MRAM) (STT MRAM) |
Jimmy Jianan Kan, Matthias Georg Gottwald, Seung H. Kang |
2018-11-20 |
$7,849,000 |
| 10103319 |
Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices |
Kangho Lee, Jimmy Jianan Kan, Xiaochun Zhu, Matthias Georg Gottwald, Seung H. Kang |
2018-10-16 |
$13,339,000 |
| 10096649 |
Reducing or avoiding metal deposition from etching magnetic tunnel junction (MTJ) devices, including magnetic random access memory (MRAM) devices |
Jimmy Jianan Kan, Seung H. Kang |
2018-10-09 |
$10,335,000 |
| 10043967 |
Self-compensation of stray field of perpendicular magnetic elements |
Wei-Chuan Chen, Xiaochun Zhu, Xia Li, Yu Lu, Seung H. Kang |
2018-08-07 |
$11,386,000 |
