Issued Patents All Time
Showing 25 most recent of 60 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12201030 | Spin-orbit torque MRAM structure and manufacture thereof | Minrui Yu, Wenhui Wang, Jaesoo Ahn, Jong Mun Kim, Sahil Patel +5 more | 2025-01-14 |
| 12075628 | Magnetic memory devices and methods of formation | Lin Xue, Jaesoo Ahn, Hsin-wei Tseng, Mahendra Pakala | 2024-08-27 |
| 11818959 | Methods for forming structures for MRAM applications | Hsin-wei Tseng, Jaesoo Ahn, Lin Xue, Mahendra Pakala | 2023-11-14 |
| 11723283 | Spin-orbit torque MRAM structure and manufacture thereof | Minrui Yu, Wenhui Wang, Jaesoo Ahn, Jong Mun Kim, Sahil Patel +5 more | 2023-08-08 |
| 11621393 | Top buffer layer for magnetic tunnel junction application | Lin Xue, Chi Hong Ching, Jaesoo Ahn, Mahendra Pakala | 2023-04-04 |
| 11522126 | Magnetic tunnel junctions with protection layers | Lin Xue, Jaesoo Ahn, Sahil Patel, Mahendra Pakala | 2022-12-06 |
| 11145808 | Methods for etching a structure for MRAM applications | Jong Mun Kim, Minrui Yu, Mang-Mang Ling, Jaesoo Ahn, Chentsau Chris Ying +3 more | 2021-10-12 |
| 11069853 | Methods for forming structures for MRAM applications | Hsin-wei Tseng, Jaesoo Ahn, Lin Xue, Mahendra Pakala | 2021-07-20 |
| 10923652 | Top buffer layer for magnetic tunnel junction application | Lin Xue, Chi Hong Ching, Jaesoo Ahn, Mahendra Pakala | 2021-02-16 |
| 10833254 | Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memory | Jimmy Jianan Kan, Peiyuan Wang, Seung H. Kang | 2020-11-10 |
| 10756259 | Spin orbit torque MRAM and manufacture thereof | Jaesoo Ahn, Hsin-wei Tseng, Lin Xue, Mahendra Pakala | 2020-08-25 |
| 10740017 | Dynamic memory protection | Wei-Chuan Chen, Sungryul Kim, Adam E. Newham, Seung H. Kang, Rashid Ahmed Akbar Attar | 2020-08-11 |
| 10636962 | Spin-orbit torque (SOT) magnetic tunnel junction (MTJ) (SOT-MTJ) devices employing perpendicular and in-plane free layer magnetic anisotropy to facilitate perpendicular magnetic orientation switching, suitable for use in memory systems for storing data | Sungryul Kim, Seung H. Kang | 2020-04-28 |
| 10547460 | Message-based key generation using physical unclonable function (PUF) | Peiyuan Wang, Jimmy Jianan Kan, Seung H. Kang | 2020-01-28 |
| 10483457 | Differential spin orbit torque magnetic random access memory (SOT-MRAM) cell structure and array | Hochul Lee, Seung H. Kang | 2019-11-19 |
| 10460780 | Magneto-resistive random access memory (MRAM) employing an integrated physically unclonable function (PUF) memory | Sungryul Kim, Seung H. Kang | 2019-10-29 |
| 10460785 | Parallel write scheme utilizing spin hall effect-assisted spin transfer torque random access memory | Hochul Lee, Seung H. Kang | 2019-10-29 |
| 10431734 | Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memory | Jimmy Jianan Kan, Peiyuan Wang, Seung H. Kang | 2019-10-01 |
| 10381060 | High-speed, low power spin-orbit torque (SOT) assisted spin-transfer torque magnetic random access memory (STT-MRAM) bit cell array | Jimmy Jianan Kan, Peiyuan Wang, Sungryul Kim, Seung H. Kang | 2019-08-13 |
| 10311930 | One-time programming (OTP) magneto-resistive random access memory (MRAM) bit cells in a physically unclonable function (PUF) memory in breakdown to a memory state from a previous read operation to provide PUF operations | Sungryul Kim, Seung H. Kang | 2019-06-04 |
| 10249814 | Dynamic memory protection | Seung H. Kang, Sungryul Kim, Wei-Chuan Chen | 2019-04-02 |
| 10134808 | Magnetic tunnel junction (MTJ) devices with heterogeneous free layer structure, particularly suited for spin-torque-transfer (STT) magnetic random access memory (MRAM) (STT MRAM) | Jimmy Jianan Kan, Matthias Georg Gottwald, Seung H. Kang | 2018-11-20 |
| 10103319 | Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices | Kangho Lee, Jimmy Jianan Kan, Xiaochun Zhu, Matthias Georg Gottwald, Seung H. Kang | 2018-10-16 |
| 10096649 | Reducing or avoiding metal deposition from etching magnetic tunnel junction (MTJ) devices, including magnetic random access memory (MRAM) devices | Jimmy Jianan Kan, Seung H. Kang | 2018-10-09 |
| 10043967 | Self-compensation of stray field of perpendicular magnetic elements | Wei-Chuan Chen, Xiaochun Zhu, Xia Li, Yu Lu, Seung H. Kang | 2018-08-07 |