| 12408557 |
Methods for forming structures with desired crystallinity for MRAM applications |
Lin Xue, Jaesoo Ahn, Chi Hong Ching, Rongjun Wang |
2025-09-02 |
|
| 12402535 |
Magnetic tunnel junctions with tunable high perpendicular magnetic anisotropy |
Lin Xue, Chi Hong Ching, Xiaodong Wang, Rongjun Wang |
2025-08-26 |
|
| 12201030 |
Spin-orbit torque MRAM structure and manufacture thereof |
Minrui Yu, Wenhui Wang, Jaesoo Ahn, Jong Mun Kim, Sahil Patel +5 more |
2025-01-14 |
|
| 12108604 |
Vertical transistor fabrication for memory applications |
Jaesoo Ahn, Thomas Jongwan Kwon |
2024-10-01 |
$68,865,000 |
| 12075628 |
Magnetic memory devices and methods of formation |
Lin Xue, Chando Park, Jaesoo Ahn, Hsin-wei Tseng |
2024-08-27 |
$120,173,000 |
| 11818959 |
Methods for forming structures for MRAM applications |
Hsin-wei Tseng, Chando Park, Jaesoo Ahn, Lin Xue |
2023-11-14 |
$33,075,000 |
| 11764058 |
Three-color 3D DRAM stack and methods of making |
Arvind Kumar, Ellie Yieh, John Tolle, Thomas Kirschenheiter, Anchuan Wang +1 more |
2023-09-19 |
$44,467,000 |
| 11723283 |
Spin-orbit torque MRAM structure and manufacture thereof |
Minrui Yu, Wenhui Wang, Jaesoo Ahn, Jong Mun Kim, Sahil Patel +5 more |
2023-08-08 |
$46,911,000 |
| 11621393 |
Top buffer layer for magnetic tunnel junction application |
Lin Xue, Chando Park, Chi Hong Ching, Jaesoo Ahn |
2023-04-04 |
$41,324,000 |
| 11552244 |
Magnetic tunnel junction structures and methods of manufacture thereof |
Lin Xue, Chi Hong Ching, Rongjun Wang |
2023-01-10 |
$38,290,000 |
| 11522126 |
Magnetic tunnel junctions with protection layers |
Lin Xue, Jaesoo Ahn, Sahil Patel, Chando Park |
2022-12-06 |
$44,170,000 |
| 11456301 |
Dram and method of making |
Arvind Kumar, Sanjeev Manhas, Satendra Kumar Gautam |
2022-09-27 |
$38,581,000 |
| 11374165 |
Method of forming ultra-smooth bottom electrode surface for depositing magnetic tunnel junctions |
Lin Xue, Sajjad Amin Hassan, Jaesoo Ahn |
2022-06-28 |
$26,475,000 |
| 11374170 |
Methods to form top contact to a magnetic tunnel junction |
Lin Xue, Jaesoo Ahn, Hsin-wei Tseng |
2022-06-28 |
$26,475,000 |
| 11264460 |
Vertical transistor fabrication for memory applications |
Arvind Kumar, Sanjeev Manhas, Ellie Yieh |
2022-03-01 |
$41,046,000 |
| 11251364 |
Magnetic tunnel junctions suitable for high temperature thermal processing |
Lin Xue, Chi Hong Ching, Jaesoo Ahn, Rongjun Wang |
2022-02-15 |
$65,265,000 |
| 11245069 |
Methods for forming structures with desired crystallinity for MRAM applications |
Lin Xue, Jaesoo Ahn, Chi Hong Ching, Rongjun Wang |
2022-02-08 |
$81,917,000 |
| 11239086 |
Back end memory integration process |
Hsin-wei Tseng, Lin Xue, Jaesoo Ahn, Sajjad Amin Hassan |
2022-02-01 |
$81,914,000 |
| 11145808 |
Methods for etching a structure for MRAM applications |
Jong Mun Kim, Minrui Yu, Chando Park, Mang-Mang Ling, Jaesoo Ahn +3 more |
2021-10-12 |
$163,741,000 |
| 11133460 |
Methods for forming structures with desired crystallinity for MRAM applications |
Lin Xue, Jaesoo Ahn, Chi Hong Ching, Rongjun Wang |
2021-09-28 |
$64,178,000 |
| 11127760 |
Vertical transistor fabrication for memory applications |
Jaesoo Ahn, Thomas Jongwan Kwon |
2021-09-21 |
$69,558,000 |
| 11069853 |
Methods for forming structures for MRAM applications |
Hsin-wei Tseng, Chando Park, Jaesoo Ahn, Lin Xue |
2021-07-20 |
$88,311,000 |
| 10998496 |
Magnetic tunnel junctions with tunable high perpendicular magnetic anisotropy |
Lin Xue, Chi Hong Ching, Xiaodong Wang, Rongjun Wang |
2021-05-04 |
$101,757,000 |
| 10957849 |
Magnetic tunnel junctions with coupling-pinning layer lattice matching |
Lin Xue, Chi Hong Ching, Rongjun Wang |
2021-03-23 |
$48,969,000 |
| 10944050 |
Magnetic tunnel junction structures and methods of manufacture thereof |
Lin Xue, Chi Hong Ching, Rongjun Wang |
2021-03-09 |
$63,182,000 |
