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Memory with a sense amplifier isolation scheme for enhancing memory read bandwidth |
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Arun Babu Pallerla, Anil Chowdary Kota |
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Anil Chowdary Kota, Dhvani Sheth |
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Dhvani Sheth, Anil Chowdary Kota, Chulmin Jung, Bin Liang |
2022-02-15 |
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One-time programmable (OTP) memory cell circuits employing a diode circuit for area reduction, and related OTP memory cell array circuits and methods |
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Bitcell for data redundancy |
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Systems and methods for optimizing magnetic torque and pulse shaping for reducing write error rate in magnetoelectric random access memory |
Albert Lee |
2020-12-08 |
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Read tracking scheme for a memory device |
Keejong Kim, Anil Chowdary Kota, Chulmin Jung |
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Image generation method and display device using the same |
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Personal immersion display device and driving method thereof |
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Differential spin orbit torque magnetic random access memory (SOT-MRAM) cell structure and array |
Chando Park, Seung H. Kang |
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Parallel write scheme utilizing spin hall effect-assisted spin transfer torque random access memory |
Chando Park, Seung H. Kang |
2019-10-29 |
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Systems and methods for reducing write error rate in magnetoelectric random access memory through pulse sharpening and reverse pulse schemes |
Albert Lee |
2019-10-29 |
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Albert Lee, Kang L. Wang |
2019-04-09 |
| 10199100 |
Sensing circuit and memory using thereof |
Albert Lee, Kang L. Wang |
2019-02-05 |
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Systems for implementing word line pulse techniques in magnetoelectric junctions |
— |
2018-10-16 |
| 9972400 |
Nonvolatile memory device and calibration method for the same |
Albert Lee, Kang L. Wang |
2018-05-15 |
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Fast and low-power sense amplifier and writing circuit for high-speed MRAM |
Kang L. Wang, Pedram Khalili Amiri, Juan G. Alzate |
2017-06-06 |
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Noise reduction apparatus for shift cable |
Yangrae Cho, Jeehyuck Choi, Wonmin Lee |
2013-08-20 |
