Issued Patents All Time
Showing 1–22 of 22 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12125526 | Memory with bitcell power boosting | Chulmin Jung, Xiao Chen, Chi-Jui Chen, Dhvani Sheth | 2024-10-22 |
| 12094528 | Memory with double redundancy | Dhvani Sheth, Hochul Lee, Chulmin Jung | 2024-09-17 |
| 11894050 | Memory with a sense amplifier isolation scheme for enhancing memory read bandwidth | Hochul Lee, Dhvani Sheth, Chulmin Jung | 2024-02-06 |
| 11854609 | Memory with reduced capacitance at a sense amplifier | Arun Babu Pallerla, Hochul Lee | 2023-12-26 |
| 11763866 | SRAM with scan mode | Arun Babu Pallerla, Changho Jung | 2023-09-19 |
| 11670351 | Memory with single-ended sensing using reset-set latch | Arun Babu Pallerla, Changho Jung, Chulmin Jung | 2023-06-06 |
| 11640835 | Memory device with built-in flexible double redundancy | Hochul Lee | 2023-05-02 |
| 11568904 | Memory with positively boosted write multiplexer | Hochul Lee, Dhvani Sheth | 2023-01-31 |
| 11250895 | Systems and methods for driving wordlines using set-reset latches | Dhvani Sheth, Hochul Lee, Chulmin Jung, Bin Liang | 2022-02-15 |
| 11250924 | One-time programmable (OTP) memory cell circuits employing a diode circuit for area reduction, and related OTP memory cell array circuits and methods | Hochul Lee, Anne Srikanth | 2022-02-15 |
| 11177010 | Bitcell for data redundancy | Hochul Lee, Anne Srikanth | 2021-11-16 |
| 11164610 | Memory device with built-in flexible double redundancy | Hochul Lee | 2021-11-02 |
| 11152038 | Testing one-time programmable (OTP) memory with data input capture through sense amplifier circuit | Keejong Kim, Hochul Lee | 2021-10-19 |
| 11114176 | Systems and methods to provide write termination for one time programmable memory cells | Hochul Lee, Keejong Kim | 2021-09-07 |
| 10853542 | Fuse-based logic repair | Samit Sengupta, Fadoua CHAFIK | 2020-12-01 |
| 10796735 | Read tracking scheme for a memory device | Hochul Lee, Keejong Kim, Chulmin Jung | 2020-10-06 |
| 10318726 | Systems and methods to provide security to one time program data | Sei Seung Yoon, Bhadri Kubendran | 2019-06-11 |
| 9570192 | System and method for reducing programming voltage stress on memory cell devices | Sei Seung Yoon, Bjorn Erik Grubelich | 2017-02-14 |
| 9252765 | N-well switching circuit | Esin Terzioglu, Gregory Ameriada Uvieghara, Sei Seung Yoon, Balachander Ganesan | 2016-02-02 |
| 8830779 | Low voltage fuse-based memory with high voltage sense amplifier | Esin Terzioglu, Gregory Ameriada Uvieghara, Sei Seung Yoon, Balachander Ganesan | 2014-09-09 |
| 8787096 | N-well switching circuit | Esin Terzioglu, Gregory Ameriada Uvieghara, Sei Seung Yoon, Balachander Ganesan | 2014-07-22 |
| 8599597 | Circuits configured to remain in a non-program state during a power-down event | Esin Terzioglu, Gregory Ameriada Uvieghara, Mehdi Hamidi Sani, Sei Seung Yoon | 2013-12-03 |