| 11527282 |
SRAM with burst mode operation |
Changho Jung, Chulmin Jung, Ritu Chaba |
2022-12-13 |
| 11152038 |
Testing one-time programmable (OTP) memory with data input capture through sense amplifier circuit |
Anil Chowdary Kota, Hochul Lee |
2021-10-19 |
| 11114176 |
Systems and methods to provide write termination for one time programmable memory cells |
Hochul Lee, Anil Chowdary Kota |
2021-09-07 |
| 10923185 |
SRAM with burst mode operation |
Changho Jung, Chulmin Jung, Ritu Chaba |
2021-02-16 |
| 10796735 |
Read tracking scheme for a memory device |
Hochul Lee, Anil Chowdary Kota, Chulmin Jung |
2020-10-06 |
| 10770132 |
SRAM with burst mode address comparator |
Changho Jung, Arun Babu Pallerla, Chulmin Jung |
2020-09-08 |
| 9959912 |
Timed sense amplifier circuits and methods in a semiconductor memory |
Chulmin Jung, Fahad Ahmed, Sei Seung Yoon |
2018-05-01 |
| 9646681 |
Memory cell with improved write margin |
Changho Jung, Sei Seung Yoon |
2017-05-09 |
| 9627041 |
Memory with a voltage-adjustment circuit to adjust the operating voltage of memory cells for BTI effect screening |
Chulmin Jung, Fahad Ahmed, Sei Seung Yoon |
2017-04-18 |
| 7508697 |
Self-repairing technique in nano-scale SRAM to reduce parametric failures |
Saibal Mukhopadhyay, Hamid Mahmoodi, Kaushik Roy |
2009-03-24 |