Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memory

Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memory

US Patent 10833254 · Granted Nov 10, 2020

Estimated economic value: $31,067,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Hybrid flop tray including different fin size flip-flops2025
Method for manufacturing monocrystalline silicon wafer containing arced side, me2025
Spin-orbit torque MRAM structure and manufacture thereof2025
Magnetic memory devices and methods of formation2024
Configurable MAC for neural network applications2023
Methods for forming structures for MRAM applications2023
Method for manufacturing monocrystalline silicon wafer containing arced side, me2023
Spin-orbit torque MRAM structure and manufacture thereof2023
Vertical power grid standard cell architecture2023
Top buffer layer for magnetic tunnel junction application2023
Magnetic tunnel junctions with protection layers2022
MIMCAP architecture2022