WC

Wei-Chuan Chen

QU Qualcomm: 44 patents #542 of 12,104Top 5%
IT ITRI: 6 patents #1,152 of 9,619Top 15%
HL Hefechip Corporation Limited: 4 patents #5 of 16Top 35%
AC Asustek Computer: 3 patents #250 of 1,430Top 20%
IC Inpaq Technology Co.: 2 patents #17 of 93Top 20%
Schlumberger Technology: 1 patents #3,893 of 7,293Top 55%
TSMC: 1 patents #8,466 of 12,232Top 70%
University Of Texas System: 1 patents #2,951 of 6,559Top 45%
VL Visera Technologies Company Limited: 1 patents #93 of 156Top 60%
CH China Medical University Hospital: 1 patents #19 of 53Top 40%
CU China Medical University: 1 patents #73 of 229Top 35%
NT Nanya Technology: 1 patents #447 of 775Top 60%
Overall (All Time): #28,502 of 4,157,543Top 1%
71
Patents All Time

Issued Patents All Time

Showing 25 most recent of 71 patents

Patent #TitleCo-InventorsDate
12417157 System and method for testing memory device Jui-Chung Hsu, Wan-Chun FANG 2025-09-16
12108684 Magnetic tunneling junction element with a composite capping layer and magnetoresistive random access memory device using the same Qinli Ma, Youngsuk Choi, Shu-Jen Han 2024-10-01
12050492 Electronic device Yalin Wu, Tsung-Ju Chiang, Po-Nien Chen 2024-07-30
11747742 Apparatus and method for removing photoresist layer from alignment mark Yuan-Chun CHAO, Tian-Wen Liao, Yi-Chang Chang, Yu-Ming Tseng 2023-09-05
11625111 Control method for electronic device Mu-Chern Fong, Chi-Rong Hsu, Po-Nien Chen, Lan Huang, Wen-Hui Huang +5 more 2023-04-11
11538986 Asymmetric engineered storage layer of magnetic tunnel junction element for magnetic memory device Qinli Ma, Shu-Jen Han 2022-12-27
11525318 Motor bypass valve Yuelin Shen, Zhengxin Zhang, Zhenyu Chen, Maria Neves Carrasquilla 2022-12-13
11456411 Method for fabricating magnetic tunneling junction element with a composite capping layer Qinli Ma, Youngsuk Choi, Shu-Jen Han 2022-09-27
11342496 Semiconductor memory structure with magnetic tunneling junction stack and method for forming the same Hong-Hui Hsu, Qinli Ma, Shu-Jen Han 2022-05-24
10993517 Suitcase with a detachable portion Tao Ma 2021-05-04
10869725 Simulated method and system for navigating surgical instrument based on tomography Yi-Wen Chen, Cheng-Ting Shih 2020-12-22
10868238 Magnetic tunnel junction integration without patterning process Xia Li, Seung H. Kang 2020-12-15
10811068 Varying energy barriers of magnetic tunnel junctions (MTJs) in different magneto-resistive random access memory (MRAM) arrays in a semiconductor die to facilitate use of MRAM for different memory applications Xia Li, Wah Nam Hsu, Seung H. Kang 2020-10-20
10740017 Dynamic memory protection Chando Park, Sungryul Kim, Adam E. Newham, Seung H. Kang, Rashid Ahmed Akbar Attar 2020-08-11
10693432 Solenoid structure with conductive pillar technology Nosun PARK, Changhan Hobie Yun, Jonghae Kim, Niranjan Sunil Mudakatte, Xiaoju YU 2020-06-23
10614942 Inductors formed with through glass vias Changhan Hobie Yun, Mario Francisco Velez, Nosun PARK, Niranjan Sunil Mudakatte, Xiaoju YU +2 more 2020-04-07
10608174 Double-patterned magneto-resistive random access memory (MRAM) for reducing magnetic tunnel junction (MTJ) pitch for increased MRAM bit cell density Xia Li 2020-03-31
10582609 Integration of through glass via (TGV) filter and acoustic filter Changhan Hobie Yun, Jonghae Kim, Xiaoju YU, Mario Francisco Velez, Niranjan Sunil Mudakatte +7 more 2020-03-03
10534047 Tunnel magneto-resistive (TMR) sensors employing TMR devices with different magnetic field sensitivities for increased detection sensitivity Wah Nam Hsu, Xia Li, Seung H. Kang, Nicholas Ka Ming Stevens-Yu 2020-01-14
10460817 Multiple (multi-) level cell (MLC) non-volatile (NV) memory (NVM) matrix circuits for performing matrix computations with multi-bit input vectors Xia Li, Seung H. Kang 2019-10-29
10446743 Double-patterned magneto-resistive random access memory (MRAM) for reducing magnetic tunnel junction (MTJ) pitch for increased MRAM bit cell density Xia Li 2019-10-15
10431278 Dynamically controlling voltage for access operations to magneto-resistive random access memory (MRAM) bit cells to account for ambient temperature Xia Li, Wah Nam Hsu, Seung H. Kang 2019-10-01
10266765 Europium-doped phosphor materials Lun Ma 2019-04-23
10249814 Dynamic memory protection Chando Park, Seung H. Kang, Sungryul Kim 2019-04-02
10210920 Magnetic tunnel junction (MTJ) devices with varied breakdown voltages in different memory arrays fabricated in a same semiconductor die to facilitate different memory applications Xia Li, Wah Nam Hsu, Seung H. Kang 2019-02-19