| 10811068 |
Varying energy barriers of magnetic tunnel junctions (MTJs) in different magneto-resistive random access memory (MRAM) arrays in a semiconductor die to facilitate use of MRAM for different memory applications |
Xia Li, Wei-Chuan Chen, Seung H. Kang |
2020-10-20 |
| 10534047 |
Tunnel magneto-resistive (TMR) sensors employing TMR devices with different magnetic field sensitivities for increased detection sensitivity |
Wei-Chuan Chen, Xia Li, Seung H. Kang, Nicholas Ka Ming Stevens-Yu |
2020-01-14 |
| 10431278 |
Dynamically controlling voltage for access operations to magneto-resistive random access memory (MRAM) bit cells to account for ambient temperature |
Xia Li, Wei-Chuan Chen, Seung H. Kang |
2019-10-01 |
| 10210920 |
Magnetic tunnel junction (MTJ) devices with varied breakdown voltages in different memory arrays fabricated in a same semiconductor die to facilitate different memory applications |
Wei-Chuan Chen, Xia Li, Seung H. Kang |
2019-02-19 |
| 9966149 |
OTP cell with reversed MTJ connection |
Jung Pill Kim, Taehyun Kim, Kangho Lee, Seung H. Kang, Xia Li |
2018-05-08 |
| 9679663 |
OTP cell with reversed MTJ connection |
Jung Pill Kim, Taehyun Kim, Kangho Lee, Seung H. Kang, Xia Li |
2017-06-13 |
| 9368232 |
Magnetic automatic test equipment (ATE) memory tester device and method employing temperature control |
Kangho Lee, Xiao Lu, Seung H. Kang |
2016-06-14 |
| 9245610 |
OTP cell with reversed MTJ connection |
Jung Pill Kim, Taehyun Kim, Kangho Lee, Seung H. Kang, Xia Li |
2016-01-26 |
| 9159455 |
Data retention error detection system |
Xiao Lu |
2015-10-13 |
| 9082962 |
Magnetic Tunnel Junction (MTJ) on planarized electrode |
Seung H. Kang, Xia Li, Wei-Chuan Chen, Kangho Lee, Xiaochun Zhu |
2015-07-14 |
| 9064589 |
Three port MTJ structure and integration |
Xia Li, Xiaochun Zhu, Seung H. Kang, Jung Pill Kim, Taehyun Kim +1 more |
2015-06-23 |
| 8923044 |
MTP MTJ device |
Xia Li, Kangho Lee, Jung Pill Kim, Taehyun Kim, Seung H. Kang +3 more |
2014-12-30 |
| 8797792 |
Non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction |
Hari M. Rao, Jung Pil Kim, Seung H. Kang, Xiaochun Zhu, Tae Hyun Kim +8 more |
2014-08-05 |
| 8681536 |
Magnetic tunnel junction (MTJ) on planarized electrode |
Seung H. Kang, Xia Li, Wei-Chuan Chen, Kangho Lee, Xiaochun Zhu |
2014-03-25 |
| 8599606 |
Memory bit repair scheme |
— |
2013-12-03 |
| 8582354 |
Method and apparatus for testing a resistive memory element |
Xia Li, Jung Pill Kim, Taehyun Kim, Seung H. Kang |
2013-11-12 |
| 8547736 |
Generating a non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction |
Hari M. Rao, Jung Pill Kim, Seung H. Kang, Xiaochun Zhu, Tae Hyun Kim +8 more |
2013-10-01 |