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Home › Reducing or avoiding metal deposition from etching magnetic tunnel junction (MTJ) devices, including magnetic random access memory (MRAM) devices

Reducing or avoiding metal deposition from etching magnetic tunnel junction (MTJ) devices, including magnetic random access memory (MRAM) devices

US Patent 10096649 · Granted Oct 9, 2018

Estimated economic value: $10,335,000 ⓘ

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