| 12093777 |
Method and terminal for identifying barcode |
Haiming Yu, Zhiqiang Xi |
2024-09-17 |
|
| 11631455 |
Compute-in-memory bitcell with capacitively-coupled write operation |
Seyed Arash Mirhaj, Ankit Srivastava, Sameer Wadhwa, Zhongze Wang |
2023-04-18 |
$13,667,000 |
| 11626156 |
Compute-in-memory (CIM) bit cell circuits each disposed in an orientation of a cim bit cell circuit layout including a read word line (RWL) circuit in a cim bit cell array circuit |
Zhongze Wang |
2023-04-11 |
$12,775,000 |
| 11581037 |
Digital compute-in-memory (DCIM) bit cell circuit layouts and DCIM arrays for multiple operations per column |
Zhongze Wang, Yandong Gao, Mustafa Badaroglu |
2023-02-14 |
$12,121,000 |
| 10991427 |
Memory programming methods and memory systems |
Jonathan J. Strand, Adam Johnson, Durai Vishak Nirmal Ramaswamy |
2021-04-27 |
$26,531,000 |
| 10964380 |
Integrated device comprising memory bitcells comprising shared preload line and shared activation line |
Zhongze Wang, Yandong Gao, Xia Li, Ye Lu, Xiaochun Zhu |
2021-03-30 |
$37,764,000 |
| 10340370 |
Asymmetric gated fin field effect transistor (FET) (finFET) diodes |
Hao Wang, Haining Yang |
2019-07-02 |
$15,255,000 |
| 10304531 |
Memory programming methods and memory systems |
Jonathan J. Strand, Adam Johnson, Durai Vishak Nirmal Ramaswamy |
2019-05-28 |
$10,177,000 |
| 10290352 |
System, apparatus, and method of programming a one-time programmable memory circuit having dual programming regions |
Xia Li, Xiao Lu, Zhongze Wang |
2019-05-14 |
$19,257,000 |
| 9876123 |
Non-volatile one-time programmable memory device |
Xia Li, Jeffrey Junhao Xu, Xiao Lu, Bin Yang, Jun Yuan +1 more |
2018-01-23 |
$14,343,000 |
| 9812188 |
Static random-access memory (SRAM) sensor for bias temperature instability |
Niladri Narayan Mojumder, Zhongze Wang, Stanley Seungchul Song, Choh Fei Yeap |
2017-11-07 |
$11,520,000 |
| 9773551 |
Memory programming methods and memory systems |
Jonathan J. Strand, Adam Johnson, Durai Vishak Nirmal Ramaswamy |
2017-09-26 |
$15,703,000 |
| 9576801 |
High dielectric constant/metal gate (HK/MG) compatible floating gate (FG)/ferroelectric dipole non-volatile memory |
Xia Li, Jeffrey Junhao Xu, Zhongze Wang, Bin Yang, Yu Lu |
2017-02-21 |
$9,078,000 |
| 9576658 |
Systems, and devices, and methods for programming a resistive memory cell |
— |
2017-02-21 |
$9,622,000 |
| 9508439 |
Non-volatile multiple time programmable memory device |
Xia Li, Jeffrey Junhao Xu, Xiao Lu, Matthew Michael Nowak, Seung H. Kang +2 more |
2016-11-29 |
$8,708,000 |
| 9496048 |
Differential one-time-programmable (OTP) memory array |
Zhongze Wang, Xia Li |
2016-11-15 |
$8,218,000 |
| 9449709 |
Volatile memory and one-time program (OTP) compatible memory cell and programming method |
Xia Li, Niladri Narayan Mojumder, Zhongze Wang, Weidan Li |
2016-09-20 |
$8,214,000 |
| 9431097 |
Volatile/non-volatile SRAM device |
Zhongze Wang, Xia Li |
2016-08-30 |
$10,588,000 |
| 9419220 |
Resistive memory elements, resistive memory cells, and resistive memory devices |
D. V. Nirmal Ramaswamy, Sanh D. Tang, Alessandro Torsi, Muralikrishnan Balakrishnan, John K. Zahurak |
2016-08-16 |
$10,478,000 |
| 9413349 |
High-K (HK)/metal gate (MG) (HK/MG) multi-time programmable (MTP) switching devices, and related systems and methods |
Xia Li, Xiao Lu, Zhongze Wang, Choh Fei Yeap |
2016-08-09 |
$11,703,000 |
| 9281062 |
Systems, and devices, and methods for programming a resistive memory cell |
— |
2016-03-08 |
$7,577,000 |
| 9245648 |
Logic high-dielectric-constant (HK) metal-gate (MG) one-time-programming (OTP) memory device sensing method |
Xia Li, Xiao Lu |
2016-01-26 |
$6,427,000 |
| 9230685 |
Memory programming methods and memory systems |
Jonathan J. Strand, Adam Johnson, D. V. Nirmal Ramaswamy |
2016-01-05 |
$5,653,000 |
| 9224471 |
Stabilization of resistive memory |
— |
2015-12-29 |
$7,843,000 |
| 9112138 |
Methods of forming resistive memory elements |
D. V. Nirmal Ramaswamy, Sanh D. Tang, Alessandro Torsi, Muralikrishnan Balakrishnan, John K. Zahurak |
2015-08-18 |
$7,931,000 |
