Issued Patents All Time
Showing 1–18 of 18 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11600691 | Memory cells comprising ferroelectric material and including current leakage paths having different total resistances | Beth R. Cook, Durai Vishak Nirmal Ramaswamy | 2023-03-07 |
| 11043497 | Integrated memory having non-ohmic devices and capacitors | Pankaj Sharma | 2021-06-22 |
| 10879344 | Memory cells comprising ferroelectric material and including current leakage paths having different total resistances | Beth R. Cook, Durai Vishak Nirmal Ramaswamy | 2020-12-29 |
| 10680057 | Methods of forming a capacitor comprising ferroelectric material and including current leakage paths having different total resistances | Beth R. Cook, Durai Vishak Nirmal Ramaswamy | 2020-06-09 |
| 10396145 | Memory cells comprising ferroelectric material and including current leakage paths having different total resistances | Beth R. Cook, Durai Vishak Nirmal Ramaswamy | 2019-08-27 |
| 9577192 | Method for forming a metal cap in a semiconductor memory device | Zailong Bian, Gowrisankar Damarla, Hongqi Li, Jin Lu, Shyam Ramalingam +1 more | 2017-02-21 |
| 9419220 | Resistive memory elements, resistive memory cells, and resistive memory devices | D. V. Nirmal Ramaswamy, Sanh D. Tang, Alessandro Torsi, Xiaonan Chen, John K. Zahurak | 2016-08-16 |
| 9112138 | Methods of forming resistive memory elements | D. V. Nirmal Ramaswamy, Sanh D. Tang, Alessandro Torsi, Xiaonan Chen, John K. Zahurak | 2015-08-18 |
| 8686388 | Non-volatile resistive sense memory with improved switching | Andreas Roelofs, Markus Jan Peter Siegert, Venugopalan Vaithyanathan, Wei Tian, Yongchul Ahn +1 more | 2014-04-01 |
| 8421048 | Non-volatile memory with active ionic interface region | Venugopalan Vaithyanathan, Markus Jan Peter Siegert, Wei Tian, Insik Jin | 2013-04-16 |
| 8309945 | Programmable metallization memory cell with planarized silver electrode | Wei Tian, Dexin Wang, Venugopalan Vaithyanathan, Yang Dong, Ivan Petrov Ivanov +2 more | 2012-11-13 |
| 8288254 | Programmable metallization memory cell with planarized silver electrode | Wei Tian, Dexin Wang, Venugopalan Vaithyanathan, Yang Dong, Ivan Petrov Ivanov +2 more | 2012-10-16 |
| 8227783 | Non-volatile resistive sense memory with praseodymium calcium manganese oxide | Andreas Roelofs, Markus Jan Peter Siegert, Venugopalan Vaithyanathan, Wei Tian, Yongchul Ahn +1 more | 2012-07-24 |
| 8134138 | Programmable metallization memory cell with planarized silver electrode | Tian Wei, Dexin Wang, Venugopalan Vaithyanathan, Yang Dong, Ivan Petrov Ivanov +2 more | 2012-03-13 |
| 8054706 | Sensor protection using a non-volatile memory cell | Phillip Mark Goldman | 2011-11-08 |
| 7402847 | Programmable logic circuit and method of using same | Michael N. Kozicki, Maria Mitkova, Chakravarthy Gopalan | 2008-07-22 |
| 7385219 | Optimized solid electrolyte for programmable metallization cell devices and structures | Michael N. Kozicki, Maria Mitkova | 2008-06-10 |
| 7372065 | Programmable metallization cell structures including an oxide electrolyte, devices including the structure and method of forming same | Michael N. Kozicki | 2008-05-13 |