| 8772122 |
Programmable metallization memory cell with layered solid electrolyte structure |
Nurul Amin, Insik Jin, Wei Tian, Andrew James Wirebaugh, Ming Sun |
2014-07-08 |
| 8686388 |
Non-volatile resistive sense memory with improved switching |
Andreas Roelofs, Markus Jan Peter Siegert, Wei Tian, Yongchul Ahn, Muralikrishnan Balakrishnan +1 more |
2014-04-01 |
| 8648426 |
Tunneling transistors |
Insik Jin, Wei Tian, Cedric Bedoya, Markus Jan Peter Siegert |
2014-02-11 |
| 8487291 |
Programmable metallization memory cell with layered solid electrolyte structure |
Nurul Amin, Insik Jin, Wei Tian, Andrew James Wirebaugh, Ming Sun |
2013-07-16 |
| 8446752 |
Programmable metallization cell switch and memory units containing the same |
Ming Sun, Nurul Amin, Insik Jin, Young-Pil Kim, Chulmin Jung +2 more |
2013-05-21 |
| 8421048 |
Non-volatile memory with active ionic interface region |
Markus Jan Peter Siegert, Wei Tian, Muralikrishnan Balakrishnan, Insik Jin |
2013-04-16 |
| 8367464 |
Nano-dimensional non-volatile memory cells |
Wei Tian, Insik Jin |
2013-02-05 |
| 8309945 |
Programmable metallization memory cell with planarized silver electrode |
Wei Tian, Dexin Wang, Yang Dong, Muralikrishnan Balakrishnan, Ivan Petrov Ivanov +2 more |
2012-11-13 |
| 8288749 |
Schottky diode switch and memory units containing the same |
Young-Pil Kim, Nurul Amin, Dadi Setiadi, Wei Tian, Insik Jin |
2012-10-16 |
| 8288254 |
Programmable metallization memory cell with planarized silver electrode |
Wei Tian, Dexin Wang, Yang Dong, Muralikrishnan Balakrishnan, Ivan Petrov Ivanov +2 more |
2012-10-16 |
| 8248836 |
Non-volatile memory cell stack with dual resistive elements |
Insik Jin, YoungPil Kim, Ming Sun, Chulmin Jung, Nurul Amin +2 more |
2012-08-21 |
| 8227783 |
Non-volatile resistive sense memory with praseodymium calcium manganese oxide |
Andreas Roelofs, Markus Jan Peter Siegert, Wei Tian, Yongchul Ahn, Muralikrishnan Balakrishnan +1 more |
2012-07-24 |
| 8203865 |
Non-volatile memory cell with non-ohmic selection layer |
Wei Tian, Insik Jin, Haiwen Xi, Michael Xuefei Tang, Brian Lee |
2012-06-19 |
| 8203875 |
Anti-parallel diode structure and method of fabrication |
Nurul Amin, Insik Jim, Wei Tian, YoungPil Kim |
2012-06-19 |
| 8198181 |
Schottky diode switch and memory units containing the same |
Young-Pil Kim, Nurul Amin, Dadi Setiadi, Wei Tian, Insik Jin |
2012-06-12 |
| 8178864 |
Asymmetric barrier diode |
Insik Jin, Wei Tian, Cedric Bedoya, Markus Jan Peter Siegert |
2012-05-15 |
| 8158964 |
Schottky diode switch and memory units containing the same |
Young-Pil Kim, Nurul Amin, Dadi Setiadi, Wei Tian, Insik Jin |
2012-04-17 |
| 8134138 |
Programmable metallization memory cell with planarized silver electrode |
Tian Wei, Dexin Wang, Yang Dong, Muralikrishnan Balakrishnan, Ivan Petrov Ivanov +2 more |
2012-03-13 |
| 8022547 |
Non-volatile memory cells including small volume electrical contact regions |
Wei Tian, Insik Jin |
2011-09-20 |
| 7936585 |
Non-volatile memory cell with non-ohmic selection layer |
Wei Tian, Insik Jin, Haiwen Xi, Michael Xuefei Tang, Brian Lee |
2011-05-03 |
| 7911833 |
Anti-parallel diode structure and method of fabrication |
Nurul Amin, Insik Jin, Wei Tian, YoungPil Kim |
2011-03-22 |