Issued Patents All Time
Showing 1–21 of 21 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8772122 | Programmable metallization memory cell with layered solid electrolyte structure | Nurul Amin, Insik Jin, Wei Tian, Andrew James Wirebaugh, Ming Sun | 2014-07-08 |
| 8686388 | Non-volatile resistive sense memory with improved switching | Andreas Roelofs, Markus Jan Peter Siegert, Wei Tian, Yongchul Ahn, Muralikrishnan Balakrishnan +1 more | 2014-04-01 |
| 8648426 | Tunneling transistors | Insik Jin, Wei Tian, Cedric Bedoya, Markus Jan Peter Siegert | 2014-02-11 |
| 8487291 | Programmable metallization memory cell with layered solid electrolyte structure | Nurul Amin, Insik Jin, Wei Tian, Andrew James Wirebaugh, Ming Sun | 2013-07-16 |
| 8446752 | Programmable metallization cell switch and memory units containing the same | Ming Sun, Nurul Amin, Insik Jin, Young-Pil Kim, Chulmin Jung +2 more | 2013-05-21 |
| 8421048 | Non-volatile memory with active ionic interface region | Markus Jan Peter Siegert, Wei Tian, Muralikrishnan Balakrishnan, Insik Jin | 2013-04-16 |
| 8367464 | Nano-dimensional non-volatile memory cells | Wei Tian, Insik Jin | 2013-02-05 |
| 8309945 | Programmable metallization memory cell with planarized silver electrode | Wei Tian, Dexin Wang, Yang Dong, Muralikrishnan Balakrishnan, Ivan Petrov Ivanov +2 more | 2012-11-13 |
| 8288749 | Schottky diode switch and memory units containing the same | Young-Pil Kim, Nurul Amin, Dadi Setiadi, Wei Tian, Insik Jin | 2012-10-16 |
| 8288254 | Programmable metallization memory cell with planarized silver electrode | Wei Tian, Dexin Wang, Yang Dong, Muralikrishnan Balakrishnan, Ivan Petrov Ivanov +2 more | 2012-10-16 |
| 8248836 | Non-volatile memory cell stack with dual resistive elements | Insik Jin, YoungPil Kim, Ming Sun, Chulmin Jung, Nurul Amin +2 more | 2012-08-21 |
| 8227783 | Non-volatile resistive sense memory with praseodymium calcium manganese oxide | Andreas Roelofs, Markus Jan Peter Siegert, Wei Tian, Yongchul Ahn, Muralikrishnan Balakrishnan +1 more | 2012-07-24 |
| 8203865 | Non-volatile memory cell with non-ohmic selection layer | Wei Tian, Insik Jin, Haiwen Xi, Michael Xuefei Tang, Brian Lee | 2012-06-19 |
| 8203875 | Anti-parallel diode structure and method of fabrication | Nurul Amin, Insik Jim, Wei Tian, YoungPil Kim | 2012-06-19 |
| 8198181 | Schottky diode switch and memory units containing the same | Young-Pil Kim, Nurul Amin, Dadi Setiadi, Wei Tian, Insik Jin | 2012-06-12 |
| 8178864 | Asymmetric barrier diode | Insik Jin, Wei Tian, Cedric Bedoya, Markus Jan Peter Siegert | 2012-05-15 |
| 8158964 | Schottky diode switch and memory units containing the same | Young-Pil Kim, Nurul Amin, Dadi Setiadi, Wei Tian, Insik Jin | 2012-04-17 |
| 8134138 | Programmable metallization memory cell with planarized silver electrode | Tian Wei, Dexin Wang, Yang Dong, Muralikrishnan Balakrishnan, Ivan Petrov Ivanov +2 more | 2012-03-13 |
| 8022547 | Non-volatile memory cells including small volume electrical contact regions | Wei Tian, Insik Jin | 2011-09-20 |
| 7936585 | Non-volatile memory cell with non-ohmic selection layer | Wei Tian, Insik Jin, Haiwen Xi, Michael Xuefei Tang, Brian Lee | 2011-05-03 |
| 7911833 | Anti-parallel diode structure and method of fabrication | Nurul Amin, Insik Jin, Wei Tian, YoungPil Kim | 2011-03-22 |