| 8487390 |
Memory cell with stress-induced anisotropy |
Dimitar V. Dimitrov, Shuiyuan Huang, Antoine Khoueir, Brian Lee, John D. Stricklin +2 more |
2013-07-16 |
| 8309945 |
Programmable metallization memory cell with planarized silver electrode |
Wei Tian, Dexin Wang, Venugopalan Vaithyanathan, Yang Dong, Muralikrishnan Balakrishnan +2 more |
2012-11-13 |
| 8288254 |
Programmable metallization memory cell with planarized silver electrode |
Wei Tian, Dexin Wang, Venugopalan Vaithyanathan, Yang Dong, Muralikrishnan Balakrishnan +2 more |
2012-10-16 |
| 8193089 |
Conductive via plug formation |
Antoine Khoueir, Yongchul Ahn, Peter Nicholas Manos, Shuiyan Huang |
2012-06-05 |
| 8134138 |
Programmable metallization memory cell with planarized silver electrode |
Tian Wei, Dexin Wang, Venugopalan Vaithyanathan, Yang Dong, Muralikrishnan Balakrishnan +2 more |
2012-03-13 |
| 8039394 |
Methods of forming layers of alpha-tantalum |
Wei Tian, Mallika Kamarajugadda, Paul E. Anderson |
2011-10-18 |
| 7998758 |
Method of fabricating a magnetic stack design with decreased substrate stress |
Yongchul Ahn, Shuiyuan Haung, Antoine Khoueir, Paul E. Anderson, Lili Jia +2 more |
2011-08-16 |
| 6977217 |
Aluminum-filled via structure with barrier layer |
Mira Ben-Tzur, Gorley Lau, FENG-YUEN DAI, Chan-Lon Yang |
2005-12-20 |
| 6638856 |
Method of depositing metal onto a substrate |
— |
2003-10-28 |
| 6344281 |
Aluminum metallization method and product |
Mark V. Smith, Frederick G. Eisenmann, III |
2002-02-05 |