| 9374122 |
Integrated on-chip duplexer for simultaneous wireless transmission |
Ali Afsahi |
2016-06-21 |
|
| 8541247 |
Non-volatile memory cell with lateral pinning |
Haiwen Xi, Antoine Khoueir, Patrick J. Ryan |
2013-09-24 |
$111,223,000 |
| 8537587 |
Dual stage sensing for non-volatile memory |
Hai Li, Yiran Chen, Yuan-Yong Yan, Ran Wang |
2013-09-17 |
$14,412,000 |
| 8508981 |
Apparatus for variable resistive memory punchthrough access method |
Maroun Georges Khoury, Hongyue Liu, Andrew John Carter |
2013-08-13 |
$12,622,000 |
| 8487390 |
Memory cell with stress-induced anisotropy |
Dimitar V. Dimitrov, Ivan Petrov Ivanov, Shuiyuan Huang, Antoine Khoueir, John D. Stricklin +2 more |
2013-07-16 |
$18,596,000 |
| 8289759 |
Non-volatile memory cell with precessional switching |
Xiaobin Wang, Yong Lu, Haiwen Xi, Yuankai Zheng, Yiran Chen +3 more |
2012-10-16 |
$4,778,000 |
| 8289748 |
Tuning a variable resistance of a resistive sense element |
Haiwen Xi, Patrick J. Ryan, Rod V. Bowman |
2012-10-16 |
$4,778,000 |
| 8203865 |
Non-volatile memory cell with non-ohmic selection layer |
Wei Tian, Insik Jin, Venugopalan Vaithyanathan, Haiwen Xi, Michael Xuefei Tang |
2012-06-19 |
$10,153,000 |
| 8199558 |
Apparatus for variable resistive memory punchthrough access method |
Maroun Georges Khoury, Hongyue Liu, Andrew John Carter |
2012-06-12 |
$7,199,000 |
| 8197953 |
Magnetic stack design |
Haiwen Xi, Antoine Khoueir, Pat J. Ryan, Michael Xuefei Tang, Insik Jin +1 more |
2012-06-12 |
$7,199,000 |
| 8098510 |
Variable resistive memory punchthrough access method |
Maroun Georges Khoury, Hongyue Liu, Andrew John Carter |
2012-01-17 |
$8,033,000 |
| 8050092 |
NAND flash memory with integrated bit line capacitance |
Chulmin Jung, Harry Hongyue Liu, Yong Lu, Dadi Setiadi |
2011-11-01 |
$13,051,000 |
| 8050072 |
Dual stage sensing for non-volatile memory |
Hai Li, Yiran Chen, Yuan-Yong Yan, Ran Wang |
2011-11-01 |
$13,051,000 |
| 7961497 |
Variable resistive memory punchthrough access method |
Maroun Georges Khoury, Hongyue Liu, Andrew John Carter |
2011-06-14 |
$7,451,000 |
| 7939188 |
Magnetic stack design |
Haiwen Xi, Antoine Khoueir, Pat J. Ryan, Michael Xuefei Tang, Insik Jin +1 more |
2011-05-10 |
$14,410,000 |
| 7936583 |
Variable resistive memory punchthrough access method |
Maroun Georges Khoury, Hongyue Liu, Andrew John Carter |
2011-05-03 |
$4,616,000 |
| 7936585 |
Non-volatile memory cell with non-ohmic selection layer |
Wei Tian, Insik Jin, Venugopalan Vaithyanathan, Haiwen Xi, Michael Xuefei Tang |
2011-05-03 |
$4,616,000 |
| 7936592 |
Non-volatile memory cell with precessional switching |
Xiaobin Wang, Yong Lu, Haiwen Xi, Yuankai Zheng, Yiran Chen +3 more |
2011-05-03 |
$4,616,000 |
| 7936622 |
Defective bit scheme for multi-layer integrated memory device |
Hai Li, Yiran Chen, Dadi Setiadi, Harry Hongyue Liu |
2011-05-03 |
$4,616,000 |
| 7402364 |
Semiconductor device with loop line pattern structure, method and alternating phase shift mask for fabricating the same |
Chih-Yu Lee |
2008-07-22 |
$446,000 |
| 7329916 |
DRAM cell arrangement with vertical MOS transistors |
Till Schlosser |
2008-02-12 |
$454,000 |
| 7087947 |
Semiconductor device with loop line pattern structure, method and alternating phase shift mask for fabricating the same |
Chih-Yu Lee |
2006-08-08 |
$198,000 |
| 6939763 |
DRAM cell arrangement with vertical MOS transistors, and method for its fabrication |
Till Schlosser |
2005-09-06 |
$82,000 |
| 6828615 |
Vertical internally-connected trench cell (V-ICTC) and formation method for semiconductor memory devices |
John Walsh |
2004-12-07 |
$69,000 |
| 6818515 |
Method for fabricating semiconductor device with loop line pattern structure |
Chih-Yu Lee |
2004-11-16 |
$108,000 |
