| 10591531 |
Method and apparatus for integrated circuit monitoring and prevention of electromigration failure |
Rajit Chandra, Melika Roshandell |
2020-03-17 |
| 10141317 |
Metal layers for a three-port bit cell |
Ritu Chaba, Ping-Lin Liu, Stanley Seungchul Song, Zhongze Wang, Choh Fei Yeap |
2018-11-27 |
| 9876017 |
Static random access memory (SRAM) bit cells with wordline landing pads split across boundary edges of the SRAM bit cells |
Stanley Seungchul Song, Zhongze Wang, Kern Rim, Choh Fei Yeap |
2018-01-23 |
| 9812188 |
Static random-access memory (SRAM) sensor for bias temperature instability |
Zhongze Wang, Xiaonan Chen, Stanley Seungchul Song, Choh Fei Yeap |
2017-11-07 |
| 9806083 |
Static random access memory (SRAM) bit cells with wordlines on separate metal layers for increased performance, and related methods |
Stanley Seungchul Song, Zhongze Wang, Kern Rim, Choh Fei Yeap |
2017-10-31 |
| 9799560 |
Self-aligned structure |
Stanley Seungchul Song, Jeffrey Junhao Xu, Kern Rim, Da Yang, John Jianhong Zhu +4 more |
2017-10-24 |
| 9786356 |
Memory device with adaptive voltage scaling based on error information |
Zhongze Wang, Jonathan Liu, Choh Fei Yeap |
2017-10-10 |
| 9721891 |
Integrated circuit devices and methods |
Jeffrey Junhao Xu, Junjing Bao, John Jianhong Zhu, Stanley Seungchul Song, Choh Fei Yeap |
2017-08-01 |
| 9666481 |
Reduced height M1 metal lines for local on-chip routing |
Stanley Seungchul Song, Choh Fei Yeap, Zhongze Wang, Mustafa Badaroglu |
2017-05-30 |
| 9660649 |
Voltage scaling for holistic energy management |
Stanley Seungchul Song, Kern Rim, Choh Fei Yeap |
2017-05-23 |
| 9542518 |
User experience based management technique for mobile system-on-chips |
Stanley Seungchul Song, Kern Rim, Choh Fei Yeap |
2017-01-10 |
| 9543248 |
Integrated circuit devices and methods |
Jeffrey Junhao Xu, Junjing Bao, John Jianhong Zhu, Stanley Seungchul Song, Choh Fei Yeap |
2017-01-10 |
| 9536596 |
Three-port bit cell having increased width |
Stanley Seungchul Song, Zhongze Wang, Choh Fei Yeap |
2017-01-03 |
| 9524972 |
Metal layers for a three-port bit cell |
Ritu Chaba, Ping-Lin Liu, Stanley Seungchul Song, Zhongze Wang, Choh Fei Yeap |
2016-12-20 |
| 9455026 |
Shared global read and write word lines |
Stanley Seungchul Song, Zhongze Wang, Ping-Lin Liu, Kern Rim, Choh Fei Yeap |
2016-09-27 |
| 9449709 |
Volatile memory and one-time program (OTP) compatible memory cell and programming method |
Xia Li, Xiaonan Chen, Zhongze Wang, Weidan Li |
2016-09-20 |
| 9424909 |
Static random access memory (SRAM) arrays having substantially constant operational yields across multiple modes of operation |
Ping-Lin Liu, Stanley Seungchul Song, Zhongze Wang, Choh Fei Yeap |
2016-08-23 |
| 9379014 |
Static random-access memory (SRAM) array |
Stanley Seungchul Song, Choh Fei Yeap, Mosaddiq Saifuddin |
2016-06-28 |
| 9349686 |
Reduced height M1 metal lines for local on-chip routing |
Stanley Seungchul Song, Choh Fei Yeap, Zhongze Wang, Mustafa Badaroglu |
2016-05-24 |
| 9336864 |
Silicon germanium read port for a static random access memory register file |
Stanley Seungchul Song, Zhongze Wang, Choh Fei Yeap |
2016-05-10 |
| 9318564 |
High density static random access memory array having advanced metal patterning |
Stanley Seungchul Song, Zhongze Wang, Choh Fei Yeap |
2016-04-19 |
| 9257407 |
Heterogeneous channel material integration into wafer |
Stanley Seungchul Song, Choh Fei Yeap, Zhongze Wang |
2016-02-09 |
| 8966418 |
Priority based layout versus schematic (LVS) |
Bipul C. Paul, Anurag Mittal, Werner Juengling |
2015-02-24 |
| 8754491 |
Spin torque MRAM using bidirectional magnonic writing |
David W. Abraham |
2014-06-17 |
| 8456895 |
Magnonic magnetic random access memory device |
David W. Abraham, Daniel C. Worledge |
2013-06-04 |