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Home › High dielectric constant/metal gate (HK/MG) compatible floating gate (FG)/ferroelectric dipole non-volatile memory

High dielectric constant/metal gate (HK/MG) compatible floating gate (FG)/ferroelectric dipole non-volatile memory

US Patent 9576801 · Granted Feb 21, 2017

Estimated economic value: $9,078,000 ⓘ

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