Issued Patents All Time
Showing 26–50 of 73 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10347827 | Perpendicular magnetic anisotropy free layers with iron insertion and oxide interfaces for spin transfer torque magnetic random access memory | — | 2019-07-09 |
| 10332576 | Magnetic exchange coupled MTJ free layer with double tunnel barriers having low switching current and high data retention | Daniel C. Worledge | 2019-06-25 |
| 10294561 | Growth of metal on a dielectric | Daniel C. Worledge | 2019-05-21 |
| 10256399 | Fabricating a cap layer for a magnetic random access memory (MRAM) device | Kwangseok KIM, Younghyun Kim, Jung Hyuk Lee, Jeong-Heon Park | 2019-04-09 |
| 10230043 | Boron segregation in magnetic tunnel junctions | Younghyun Kim, Chandrasekara Kothandaraman, Jeong-Heon Park | 2019-03-12 |
| 10079337 | Double magnetic tunnel junction with dynamic reference layer | Matthias Georg Gottwald | 2018-09-18 |
| 10003016 | Perpendicular magnetic anisotropy BCC multilayers | Daniel C. Worledge | 2018-06-19 |
| 9978935 | Perpendicular magnetic anisotrophy free layers with iron insertion and oxide interfaces for spin transfer torque magnetic random access memory | — | 2018-05-22 |
| 9963780 | Growth of metal on a dielectric | Daniel C. Worledge | 2018-05-08 |
| 9960348 | In-situ annealing to improve the tunneling magneto-resistance of magnetic tunnel junctions | Daniel C. Worledge | 2018-05-01 |
| 9941465 | Magnetic domain wall shift register memory devices with high magnetoresistance ratio structures | Cheng-Wei Chien | 2018-04-10 |
| 9892840 | Current constriction for spin torque MRAM | Daniel C. Worledge | 2018-02-13 |
| 9893273 | Light element doped low magnetic moment material spin torque transfer MRAM | Junghyuk Lee, Jeong-Heon Park | 2018-02-13 |
| 9853208 | In-situ annealing to improve the tunneling magneto-resistance of magnetic tunnel junctions | Daniel C. Worledge | 2017-12-26 |
| 9799823 | High temperature endurable MTJ stack | Kwangseok KIM, Younghyun Kim, Junghyuk Lee, Luqiao Liu, Jeong-Heon Park | 2017-10-24 |
| 9799826 | Current constriction for spin torque MRAM | Daniel C. Worledge | 2017-10-24 |
| 9773971 | Perpendicular magnetic anisotropy BCC multilayers | Daniel C. Worledge | 2017-09-26 |
| 9715917 | Spin torque MRAM based on Co, Ir synthetic antiferromagnetic multilayer | Luqiao Liu, Jonathan Zanhong Sun, Daniel C. Worledge | 2017-07-25 |
| 9660180 | Current constriction for spin torque MRAM | Daniel C. Worledge | 2017-05-23 |
| 9647204 | Spin torque MRAM based on Co, Ir synthetic antiferromagnetic multilayer | Luqiao Liu, Jonathan Zanhong Sun, Daniel C. Worledge | 2017-05-09 |
| 9620708 | Perpendicular magnetic anisotropy BCC multilayers | Daniel C. Worledge | 2017-04-11 |
| 9564580 | Double synthetic antiferromagnet using rare earth metals and transition metals | Daniel C. Worledge | 2017-02-07 |
| 9537090 | Perpendicular magnetic anisotropy free layers with iron insertion and oxide interfaces for spin transfer torque magnetic random access memory | — | 2017-01-03 |
| 9502641 | Double synthetic antiferromagnet using rare earth metals and transition metals | Daniel C. Worledge | 2016-11-22 |
| 9490422 | Current constriction for spin torque MRAM | Daniel C. Worledge | 2016-11-08 |