JS

Jonathan Zanhong Sun

IBM: 41 patents #2,268 of 70,183Top 4%
HT Headway Technologies: 2 patents #181 of 309Top 60%
📍 Shrub Oak, NY: #2 of 28 inventorsTop 8%
🗺 New York: #2,549 of 115,490 inventorsTop 3%
Overall (All Time): #75,696 of 4,157,543Top 2%
41
Patents All Time

Issued Patents All Time

Showing 26–41 of 41 patents

Patent #TitleCo-InventorsDate
7993535 Robust self-aligned process for sub-65nm current-perpendicular junction pillars Xin Jiang, Stuart Stephen Papworth Parkin 2011-08-09
7943399 Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element Rolf Allenspach, Stuart Stephen Papworth Parkin, John Casimir Slonczewski, Bruce David Terris 2011-05-17
7894245 Spin-current switchable magnetic memory element and method of fabricating the memory element Stuart Stephen Papworth Parkin 2011-02-22
7602000 Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element Rolf Allenspach, Stuart Stephen Papworth Parkin, John Casimir Slonczewski, Bruce David Terris 2009-10-13
7525862 Methods involving resetting spin-torque magnetic random access memory with domain wall Rudolf M. Tromp 2009-04-28
7505308 Systems involving spin-transfer magnetic random access memory Solomon Assefa, William J. Gallagher, Chung H. Lam 2009-03-17
7492631 Methods involving resetting spin-torque magnetic random access memory Solomon Assefa, William J. Gallagher, Chung H. Lam 2009-02-17
7459266 Phase-change memory cell and method of fabricating the phase-change memory cell Simone Raoux, Hemantha Wichramasinghe 2008-12-02
7376006 Enhanced programming performance in a nonvolatile memory device having a bipolar programmable storage element Johannes G. Bednorz, John K. DeBrosse, Chung H. Lam, Gerhard Ingmar Meijer 2008-05-20
7313013 Spin-current switchable magnetic memory element and method of fabricating the memory element Stuart Stephen Papworth Parkin 2007-12-25
6936840 Phase-change memory cell and method of fabricating the phase-change memory cell Simone Raoux, Hemantha Wichramasinghe 2005-08-30
6256223 Current-induced magnetic switching device and memory including the same 2001-07-03
6130814 Current-induced magnetic switching device and memory including the same 2000-10-10
5841692 Magnetic tunnel junction device with antiferromagnetically coupled pinned layer William J. Gallagher, Stuart Stephen Papworth Parkin, John Casimir Slonczewski 1998-11-24
5792569 Magnetic devices and sensors based on perovskite manganese oxide materials Arunava Gupta, Gang Xiao, Philip L. Trouilloud, Philippe P. Lecoeur 1998-08-11
5650958 Magnetic tunnel junctions with controlled magnetic response William J. Gallagher, Stuart Stephen Papworth Parkin, John Casimir Slonczewski 1997-07-22