Issued Patents All Time
Showing 1–25 of 151 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12167701 | Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications | Huanlong Liu, Yuan-Jen Lee, Jian Zhu, Guenole Jan | 2024-12-10 |
| 11696511 | Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions | Sahil Patel, Guenole Jan, Ru-Ying Tong, Vignesh Sundar, Dongna Shen +2 more | 2023-07-04 |
| 11573270 | Electrical testing apparatus for spintronics devices | Guenole Jan, Huanlong Liu, Jian Zhu, Yuan-Jen Lee | 2023-02-07 |
| 11569441 | Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anistropy | Huanlong Liu, Yuan-Jen Lee, Jian Zhu, Guenole Jan, Luc Thomas +2 more | 2023-01-31 |
| 11563170 | Fully compensated synthetic ferromagnet for spintronics applications | Jian Zhu, Guenole Jan, Yuan-Jen Lee, Huanlong Liu, Ru-Ying Tong | 2023-01-24 |
| 11309489 | Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications | Huanlong Liu, Yuan-Jen Lee, Jian Zhu, Guenole Jan | 2022-04-19 |
| 11054471 | Electrical testing apparatus for spintronics devices | Guenole Jan, Huanlong Liu, Jian Zhu, Yuan-Jen Lee | 2021-07-06 |
| 10978124 | Method and circuits for programming STT-MRAM cells for reducing back-hopping | Huanlong Liu, Guenole Jan, Yuan-Jen Lee, Jian Zhu | 2021-04-13 |
| 10797232 | Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions | Sahil Patel, Guenole Jan, Ru-Ying Tong, Vignesh Sundar, Dongna Shen +2 more | 2020-10-06 |
| 10763428 | Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications | Huanlong Liu, Yuan-Jen Lee, Jian Zhu, Guenole Jan | 2020-09-01 |
| 10699765 | Methods and circuits for programming STT-MRAM cells for reducing back-hopping | Huanlong Liu, Guenole Jan, Yuan-Jen Lee, Jian Zhu | 2020-06-30 |
| 10658577 | Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy | Huanlong Liu, Yuan-Jen Lee, Jian Zhu, Guenole Jan, Luc Thomas +2 more | 2020-05-19 |
| 10522745 | Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions | Sahil Patel, Guenole Jan, Ru-Ying Tong, Vignesh Sundar, Dongna Shen +2 more | 2019-12-31 |
| 10522747 | Fully compensated synthetic ferromagnet for spintronics applications | Jian Zhu, Guenole Jan, Yuan-Jen Lee, Huanlong Liu, Ru-Ying Tong | 2019-12-31 |
| 10509074 | Electrical testing apparatus for spintronics devices | Guenole Jan, Huanlong Liu, Jian Zhu, Yuan-Jen Lee | 2019-12-17 |
| 10431736 | Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy | Huanlong Liu, Yuan-Jen Lee, Jian Zhu, Guenole Jan, Luc Thomas +2 more | 2019-10-01 |
| 10230044 | Fully compensated synthetic ferromagnet for spintronics applications | Jian Zhu, Guenole Jan, Yuan-Jen Lee, Huanlong Liu, Ru-Ying Tong | 2019-03-12 |
| 10203379 | GMR biosensor with enhanced sensitivity | Xizeng Shi, Chyu-Jiuh Torng | 2019-02-12 |
| 10193062 | MgO insertion into free layer for magnetic memory applications | Jodi Mari Iwata, Guenole Jan, Ru-Ying Tong | 2019-01-29 |
| 10102896 | Adaptive reference scheme for magnetic memory applications | Guenole Jan, John K. De Brosse, Yuan-Jen Lee | 2018-10-16 |
| 10014465 | Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy | Huanlong Liu, Yuan-Jen Lee, Jian Zhu, Guenole Jan, Luc Thomas +2 more | 2018-07-03 |
| 9966529 | MgO insertion into free layer for magnetic memory applications | Jodi Mari Iwata, Guenole Jan, Ru-Ying Tong | 2018-05-08 |
| 9842988 | Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications | Huanlong Liu, Yuan-Jen Lee, Jian Zhu, Guenole Jan | 2017-12-12 |
| 9805816 | Implementation of a one time programmable memory using a MRAM stack design | Guenole Jan, Yuan-Jen Lee, Jian Zhu, Huanlong Liu | 2017-10-31 |
| 9780299 | Multilayer structure for reducing film roughness in magnetic devices | Jian Zhu, Guenole Jan, Yuan-Jen Lee, Huanlong Liu, Ru-Ying Tong | 2017-10-03 |