Issued Patents All Time
Showing 1–25 of 27 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12356865 | Multilayer structure for reducing film roughness in magnetic devices | Jian Zhu, Guenole Jan, Yuan-Jen Lee, Huanlong Liu, Ru-Ying Tong +4 more | 2025-07-08 |
| 12213385 | Protective passivation layer for magnetic tunnel junctions | Guenole Jan, Ru-Ying Tong | 2025-01-28 |
| 12167699 | Magnetic layer for magnetic random access memory (MRAM) by moment enhancement | Guenole Jan, Ru-Ying Tong, Huanlong Liu, Yuan-Jen Lee, Jian Zhu | 2024-12-10 |
| 11956971 | Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin-torque transfer-magnetic random access memory) devices | Huanlong Liu, Guenole Jan, Ru-Ying Tong, Jian Zhu, Yuan-Jen Lee +2 more | 2024-04-09 |
| 11849646 | Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM) | Guenole Jan, Ru-Ying Tong, Vignesh Sundar, Jian Zhu, Huanlong Liu | 2023-12-19 |
| 11758820 | Protective passivation layer for magnetic tunnel junctions | Guenole Jan, Ru-Ying Tong | 2023-09-12 |
| 11683994 | Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratio | Santiago Serrano Guisan, Luc Thomas, Guenole Jan, Ru-Ying Tong | 2023-06-20 |
| 11569441 | Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anistropy | Huanlong Liu, Yuan-Jen Lee, Jian Zhu, Guenole Jan, Luc Thomas +2 more | 2023-01-31 |
| 11417835 | Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM) | Guenole Jan, Ru-Ying Tong, Vignesh Sundar, Jian Zhu, Huanlong Liu | 2022-08-16 |
| 11316098 | High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applications | Guenole Jan, Ru-Ying Tong, Huanlong Lui, Yuan-Jen Lee, Jian Zhu | 2022-04-26 |
| 11264566 | Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratio | Santiago Serrano Guisan, Luc Thomas, Guenole Jan, Ru-Ying Tong | 2022-03-01 |
| 11264560 | Minimal thickness, low switching voltage magnetic free layers using an oxidation control layer and magnetic moment tuning layer for spintronic applications | Guenole Jan, Santiago Serrano Guisan, Luc Thomas, Ru-Ying Tong | 2022-03-01 |
| 11024798 | Protective passivation layer for magnetic tunnel junctions | Guenole Jan, Ru-Ying Tong | 2021-06-01 |
| 10957851 | Magnetic layer for magnetic random access memory (MRAM) by moment enhancement | Guenole Jan, Ru-Ying Tong, Huanlong Liu, Yuan-Jen Lee, Jian Zhu | 2021-03-23 |
| 10950782 | Nitride diffusion barrier structure for spintronic applications | Santiago Serrano Guisan, Luc Thomas, Guenole Jan, Vignesh Sundar | 2021-03-16 |
| 10784310 | Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin torque transfer-magnetic random access memory) devices | Huanlong Liu, Guenole Jan, Ru-Ying Tong, Jian Zhu, Yuan-Jen Lee +2 more | 2020-09-22 |
| 10665773 | Nitride capping layer for spin torque transfer (STT)-magnetoresistive random access memory (MRAM) | Guenole Jan, Ru-Ying Tong, Vignesh Sundar, Jian Zhu, Huanlong Liu | 2020-05-26 |
| 10658577 | Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy | Huanlong Liu, Yuan-Jen Lee, Jian Zhu, Guenole Jan, Luc Thomas +2 more | 2020-05-19 |
| 10522752 | Magnetic layer for magnetic random access memory (MRAM) by moment enhancement | Guenole Jan, Ru-Ying Tong, Huanlong Liu, Yuan-Jen Lee, Jian Zhu | 2019-12-31 |
| 10522744 | High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applications | Guenole Jan, Ru-Ying Tong, Huanlong Liu, Yuan-Jen Lee, Jian Zhu | 2019-12-31 |
| 10439132 | Protective passivation layer for magnetic tunnel junctions | Guenole Jan, Ru-Ying Tong | 2019-10-08 |
| 10431736 | Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy | Huanlong Liu, Yuan-Jen Lee, Jian Zhu, Guenole Jan, Luc Thomas +2 more | 2019-10-01 |
| 10347281 | Structures and methods for templated growth of high areal density heat assisted magnetic recording media | Hitesh Arora, Bruce Alvin Gurney, Olav Hellwig, Tiffany Santos, Dieter K. Weller +1 more | 2019-07-09 |
| 10193062 | MgO insertion into free layer for magnetic memory applications | Guenole Jan, Ru-Ying Tong, Po-Kang Wang | 2019-01-29 |
| 10115892 | Multilayer structure for reducing film roughness in magnetic devices | Jian Zhu, Guenole Jan, Yuan-Jen Lee, Huanlong Liu, Ru-Ying Tong +4 more | 2018-10-30 |