Issued Patents All Time
Showing 1–25 of 43 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12414476 | Method for forming a perpendicular spin torque oscillator (PSTO) including forming a magneto resistive sensor (MR) over a spin torque oscillator (STO) | Jian Zhu, Keyu Pi, Ru-Ying Tong | 2025-09-09 |
| 12356865 | Multilayer structure for reducing film roughness in magnetic devices | Jian Zhu, Guenole Jan, Yuan-Jen Lee, Ru-Ying Tong, Jodi Mari Iwata +4 more | 2025-07-08 |
| 12167699 | Magnetic layer for magnetic random access memory (MRAM) by moment enhancement | Guenole Jan, Jodi Mari Iwata, Ru-Ying Tong, Yuan-Jen Lee, Jian Zhu | 2024-12-10 |
| 12167701 | Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications | Yuan-Jen Lee, Jian Zhu, Guenole Jan, Po-Kang Wang | 2024-12-10 |
| 11956971 | Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin-torque transfer-magnetic random access memory) devices | Guenole Jan, Ru-Ying Tong, Jian Zhu, Yuan-Jen Lee, Jodi Mari Iwata +2 more | 2024-04-09 |
| 11849646 | Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM) | Jodi Mari Iwata, Guenole Jan, Ru-Ying Tong, Vignesh Sundar, Jian Zhu | 2023-12-19 |
| 11696511 | Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions | Sahil Patel, Guenole Jan, Ru-Ying Tong, Vignesh Sundar, Dongna Shen +2 more | 2023-07-04 |
| 11573270 | Electrical testing apparatus for spintronics devices | Guenole Jan, Jian Zhu, Yuan-Jen Lee, Po-Kang Wang | 2023-02-07 |
| 11569441 | Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anistropy | Yuan-Jen Lee, Jian Zhu, Guenole Jan, Luc Thomas, Po-Kang Wang +2 more | 2023-01-31 |
| 11563170 | Fully compensated synthetic ferromagnet for spintronics applications | Jian Zhu, Guenole Jan, Yuan-Jen Lee, Ru-Ying Tong, Po-Kang Wang | 2023-01-24 |
| 11417835 | Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM) | Jodi Mari Iwata, Guenole Jan, Ru-Ying Tong, Vignesh Sundar, Jian Zhu | 2022-08-16 |
| 11309489 | Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications | Yuan-Jen Lee, Jian Zhu, Guenole Jan, Po-Kang Wang | 2022-04-19 |
| 11054471 | Electrical testing apparatus for spintronics devices | Guenole Jan, Jian Zhu, Yuan-Jen Lee, Po-Kang Wang | 2021-07-06 |
| 10978124 | Method and circuits for programming STT-MRAM cells for reducing back-hopping | Guenole Jan, Yuan-Jen Lee, Jian Zhu, Po-Kang Wang | 2021-04-13 |
| 10957851 | Magnetic layer for magnetic random access memory (MRAM) by moment enhancement | Guenole Jan, Jodi Mari Iwata, Ru-Ying Tong, Yuan-Jen Lee, Jian Zhu | 2021-03-23 |
| 10867651 | Initialization process for magnetic random access memory (MRAM) production | Yuan-Jen Lee, Guenole Jan, Jian Zhu | 2020-12-15 |
| 10797232 | Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions | Sahil Patel, Guenole Jan, Ru-Ying Tong, Vignesh Sundar, Dongna Shen +2 more | 2020-10-06 |
| 10784310 | Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin torque transfer-magnetic random access memory) devices | Guenole Jan, Ru-Ying Tong, Jian Zhu, Yuan-Jen Lee, Jodi Mari Iwata +2 more | 2020-09-22 |
| 10763428 | Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications | Yuan-Jen Lee, Jian Zhu, Guenole Jan, Po-Kang Wang | 2020-09-01 |
| 10699765 | Methods and circuits for programming STT-MRAM cells for reducing back-hopping | Guenole Jan, Yuan-Jen Lee, Jian Zhu, Po-Kang Wang | 2020-06-30 |
| 10665773 | Nitride capping layer for spin torque transfer (STT)-magnetoresistive random access memory (MRAM) | Jodi Mari Iwata, Guenole Jan, Ru-Ying Tong, Vignesh Sundar, Jian Zhu | 2020-05-26 |
| 10658577 | Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy | Yuan-Jen Lee, Jian Zhu, Guenole Jan, Luc Thomas, Po-Kang Wang +2 more | 2020-05-19 |
| 10522752 | Magnetic layer for magnetic random access memory (MRAM) by moment enhancement | Guenole Jan, Jodi Mari Iwata, Ru-Ying Tong, Yuan-Jen Lee, Jian Zhu | 2019-12-31 |
| 10522744 | High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applications | Guenole Jan, Jodi Mari Iwata, Ru-Ying Tong, Yuan-Jen Lee, Jian Zhu | 2019-12-31 |
| 10522745 | Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions | Sahil Patel, Guenole Jan, Ru-Ying Tong, Vignesh Sundar, Dongna Shen +2 more | 2019-12-31 |