Issued Patents All Time
Showing 26–43 of 43 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10522747 | Fully compensated synthetic ferromagnet for spintronics applications | Jian Zhu, Guenole Jan, Yuan-Jen Lee, Ru-Ying Tong, Po-Kang Wang | 2019-12-31 |
| 10509074 | Electrical testing apparatus for spintronics devices | Guenole Jan, Jian Zhu, Yuan-Jen Lee, Po-Kang Wang | 2019-12-17 |
| 10431736 | Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy | Yuan-Jen Lee, Jian Zhu, Guenole Jan, Luc Thomas, Po-Kang Wang +2 more | 2019-10-01 |
| 10325639 | Initialization process for magnetic random access memory (MRAM) production | Yuan-Jen Lee, Guenole Jan, Jian Zhu | 2019-06-18 |
| 10230044 | Fully compensated synthetic ferromagnet for spintronics applications | Jian Zhu, Guenole Jan, Yuan-Jen Lee, Ru-Ying Tong, Po-Kang Wang | 2019-03-12 |
| 10115892 | Multilayer structure for reducing film roughness in magnetic devices | Jian Zhu, Guenole Jan, Yuan-Jen Lee, Ru-Ying Tong, Jodi Mari Iwata +4 more | 2018-10-30 |
| 10014465 | Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy | Yuan-Jen Lee, Jian Zhu, Guenole Jan, Luc Thomas, Po-Kang Wang +2 more | 2018-07-03 |
| 9842988 | Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications | Yuan-Jen Lee, Jian Zhu, Guenole Jan, Po-Kang Wang | 2017-12-12 |
| 9812184 | Current induced spin-momentum transfer stack with dual insulating layers | Andrew Kent, Daniel Bedau | 2017-11-07 |
| 9805816 | Implementation of a one time programmable memory using a MRAM stack design | Guenole Jan, Po-Kang Wang, Yuan-Jen Lee, Jian Zhu | 2017-10-31 |
| 9780299 | Multilayer structure for reducing film roughness in magnetic devices | Jian Zhu, Guenole Jan, Yuan-Jen Lee, Ru-Ying Tong, Po-Kang Wang | 2017-10-03 |
| 9721631 | Precessional magnetization reversal in a magnetic tunnel junction with a perpendicular polarizer | Andrew Kent | 2017-08-01 |
| 9673385 | Seed layer for growth of <111> magnetic materials | Ru-Ying Tong, Guenole Jan | 2017-06-06 |
| 9449668 | Current induced spin-momentum transfer stack with dual insulating layers | Andrew Kent, Daniel Bedau | 2016-09-20 |
| 9425387 | Magnetic element with perpendicular magnetic anisotropy for high coercivity after high temperature annealing | Yuan-Jen Lee, Jian Zhu, Guenole Jan, Ruth Tong, Luc Thomas | 2016-08-23 |
| 9236103 | Bipolar spin-transfer switching | Andrew Kent, Daniel Bedau | 2016-01-12 |
| 8941196 | Precessional reversal in orthogonal spin transfer magnetic RAM devices | Daniel Bedau, Andrew Kent | 2015-01-27 |
| 8755222 | Bipolar spin-transfer switching | Andrew Kent, Daniel Bedau | 2014-06-17 |