Issued Patents All Time
Showing 1–25 of 110 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12356865 | Multilayer structure for reducing film roughness in magnetic devices | Jian Zhu, Yuan-Jen Lee, Huanlong Liu, Ru-Ying Tong, Jodi Mari Iwata +4 more | 2025-07-08 |
| 12249450 | Perpendicularly magnetized ferromagnetic layers having an oxide interface allowing for improved control of oxidation | Luc Thomas, Ru-Ying Tong | 2025-03-11 |
| 12213385 | Protective passivation layer for magnetic tunnel junctions | Jodi Mari Iwata, Ru-Ying Tong | 2025-01-28 |
| 12167701 | Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications | Huanlong Liu, Yuan-Jen Lee, Jian Zhu, Po-Kang Wang | 2024-12-10 |
| 12167699 | Magnetic layer for magnetic random access memory (MRAM) by moment enhancement | Jodi Mari Iwata, Ru-Ying Tong, Huanlong Liu, Yuan-Jen Lee, Jian Zhu | 2024-12-10 |
| 12082509 | Dual magnetic tunnel junction (DMTJ) stack design | Vignesh Sundar, Yu-Jen Wang, Luc Thomas, Sahil Patel, Ru-Ying Tong | 2024-09-03 |
| 11956971 | Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin-torque transfer-magnetic random access memory) devices | Huanlong Liu, Ru-Ying Tong, Jian Zhu, Yuan-Jen Lee, Jodi Mari Iwata +2 more | 2024-04-09 |
| 11930717 | Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM | Robert Beach, Yu-Jen Wang, Ru-Ying Tong | 2024-03-12 |
| 11930716 | Reduction of capping layer resistance area product for magnetic device applications | Ru-Ying Tong | 2024-03-12 |
| 11849646 | Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM) | Jodi Mari Iwata, Ru-Ying Tong, Vignesh Sundar, Jian Zhu, Huanlong Liu | 2023-12-19 |
| 11758820 | Protective passivation layer for magnetic tunnel junctions | Jodi Mari Iwata, Ru-Ying Tong | 2023-09-12 |
| 11696511 | Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions | Sahil Patel, Ru-Ying Tong, Vignesh Sundar, Dongna Shen, Yu-Jen Wang +2 more | 2023-07-04 |
| 11683994 | Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratio | Santiago Serrano Guisan, Luc Thomas, Jodi Mari Iwata, Ru-Ying Tong | 2023-06-20 |
| 11672182 | Seed layer for multilayer magnetic materials | Ru-Ying Tong | 2023-06-06 |
| 11609296 | Method for measuring saturation magnetization of magnetic films and multilayer stacks | Santiago Serrano Guisan, Luc Thomas, Son Le | 2023-03-21 |
| 11597993 | Monolayer-by-monolayer growth of MgO layers using mg sublimation and oxidation | Sahil Patel, Yu-Jen Wang | 2023-03-07 |
| 11573270 | Electrical testing apparatus for spintronics devices | Huanlong Liu, Jian Zhu, Yuan-Jen Lee, Po-Kang Wang | 2023-02-07 |
| 11569441 | Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anistropy | Huanlong Liu, Yuan-Jen Lee, Jian Zhu, Luc Thomas, Po-Kang Wang +2 more | 2023-01-31 |
| 11563170 | Fully compensated synthetic ferromagnet for spintronics applications | Jian Zhu, Yuan-Jen Lee, Huanlong Liu, Ru-Ying Tong, Po-Kang Wang | 2023-01-24 |
| 11495738 | Dual magnetic tunnel junction devices for magnetic random access memory (MRAM) | Vignesh Sundar, Yu-Jen Wang, Luc Thomas | 2022-11-08 |
| 11417835 | Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM) | Jodi Mari Iwata, Ru-Ying Tong, Vignesh Sundar, Jian Zhu, Huanlong Liu | 2022-08-16 |
| 11397226 | Ferromagnetic resonance (FMR) electrical testing apparatus for spintronic devices | Son Le, Luc Thomas, Santiago Serrano Guisan | 2022-07-26 |
| 11316098 | High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applications | Jodi Mari Iwata, Ru-Ying Tong, Huanlong Lui, Yuan-Jen Lee, Jian Zhu | 2022-04-26 |
| 11309489 | Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications | Huanlong Liu, Yuan-Jen Lee, Jian Zhu, Po-Kang Wang | 2022-04-19 |
| 11264566 | Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratio | Santiago Serrano Guisan, Luc Thomas, Jodi Mari Iwata, Ru-Ying Tong | 2022-03-01 |