Issued Patents All Time
Showing 1–25 of 188 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12414476 | Method for forming a perpendicular spin torque oscillator (PSTO) including forming a magneto resistive sensor (MR) over a spin torque oscillator (STO) | Huanlong Liu, Jian Zhu, Keyu Pi | 2025-09-09 |
| 12356865 | Multilayer structure for reducing film roughness in magnetic devices | Jian Zhu, Guenole Jan, Yuan-Jen Lee, Huanlong Liu, Jodi Mari Iwata +4 more | 2025-07-08 |
| 12249450 | Perpendicularly magnetized ferromagnetic layers having an oxide interface allowing for improved control of oxidation | Luc Thomas, Guenole Jan | 2025-03-11 |
| 12213385 | Protective passivation layer for magnetic tunnel junctions | Jodi Mari Iwata, Guenole Jan | 2025-01-28 |
| 12185641 | Silicon oxynitride based encapsulation layer for magnetic tunnel junctions | Vignesh Sundar, Yu-Jen Wang, Dongna Shen, Sahil Patel | 2024-12-31 |
| 12167699 | Magnetic layer for magnetic random access memory (MRAM) by moment enhancement | Guenole Jan, Jodi Mari Iwata, Huanlong Liu, Yuan-Jen Lee, Jian Zhu | 2024-12-10 |
| 12082509 | Dual magnetic tunnel junction (DMTJ) stack design | Vignesh Sundar, Yu-Jen Wang, Luc Thomas, Guenole Jan, Sahil Patel | 2024-09-03 |
| 12027191 | Free layer structure in magnetic random access memory (MRAM) for Mo or W perpendicular magnetic anisotropy (PMA) enhancing layer | Hideaki Fukuzawa, Vignesh Sundar, Yu-Jen Wang | 2024-07-02 |
| 11956971 | Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin-torque transfer-magnetic random access memory) devices | Huanlong Liu, Guenole Jan, Jian Zhu, Yuan-Jen Lee, Jodi Mari Iwata +2 more | 2024-04-09 |
| 11930717 | Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM | Robert Beach, Guenole Jan, Yu-Jen Wang | 2024-03-12 |
| 11930716 | Reduction of capping layer resistance area product for magnetic device applications | Guenole Jan | 2024-03-12 |
| 11849646 | Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM) | Jodi Mari Iwata, Guenole Jan, Vignesh Sundar, Jian Zhu, Huanlong Liu | 2023-12-19 |
| 11758820 | Protective passivation layer for magnetic tunnel junctions | Jodi Mari Iwata, Guenole Jan | 2023-09-12 |
| 11696511 | Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions | Sahil Patel, Guenole Jan, Vignesh Sundar, Dongna Shen, Yu-Jen Wang +2 more | 2023-07-04 |
| 11683994 | Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratio | Santiago Serrano Guisan, Luc Thomas, Jodi Mari Iwata, Guenole Jan | 2023-06-20 |
| 11672182 | Seed layer for multilayer magnetic materials | Guenole Jan | 2023-06-06 |
| 11569441 | Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anistropy | Huanlong Liu, Yuan-Jen Lee, Jian Zhu, Guenole Jan, Luc Thomas +2 more | 2023-01-31 |
| 11563170 | Fully compensated synthetic ferromagnet for spintronics applications | Jian Zhu, Guenole Jan, Yuan-Jen Lee, Huanlong Liu, Po-Kang Wang | 2023-01-24 |
| 11417835 | Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM) | Jodi Mari Iwata, Guenole Jan, Vignesh Sundar, Jian Zhu, Huanlong Liu | 2022-08-16 |
| 11411174 | Silicon oxynitride based encapsulation layer for magnetic tunnel junctions | Vignesh Sundar, Yu-Jen Wang, Dongna Shen, Sahil Patel | 2022-08-09 |
| 11316103 | Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damage | Dongna Shen, Yu-Jen Wang, Vignesh Sundar, Sahil Patel | 2022-04-26 |
| 11316098 | High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applications | Guenole Jan, Jodi Mari Iwata, Huanlong Lui, Yuan-Jen Lee, Jian Zhu | 2022-04-26 |
| 11289645 | Method to integrate MRAM devices to the interconnects of 30nm and beyond CMOS technologies | Yi Yang, Vignesh Sundar, Dongna Shen, Sahil Patel, Yu-Jen Wang | 2022-03-29 |
| 11264560 | Minimal thickness, low switching voltage magnetic free layers using an oxidation control layer and magnetic moment tuning layer for spintronic applications | Jodi Mari Iwata, Guenole Jan, Santiago Serrano Guisan, Luc Thomas | 2022-03-01 |
| 11264566 | Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratio | Santiago Serrano Guisan, Luc Thomas, Jodi Mari Iwata, Guenole Jan | 2022-03-01 |