Issued Patents All Time
Showing 26–50 of 188 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11107977 | Seed layer for multilayer magnetic materials | Guenole Jan | 2021-08-31 |
| 11087810 | Free layer structure in magnetic random access memory (MRAM) for Mo or W perpendicular magnetic anisotropy (PMA) enhancing layer | Hideaki Fukuzawa, Vignesh Sundar, Yu-Jen Wang | 2021-08-10 |
| 11031547 | Reduction of capping layer resistance area product for magnetic device applications | Guenole Jan | 2021-06-08 |
| 11024798 | Protective passivation layer for magnetic tunnel junctions | Jodi Mari Iwata, Guenole Jan | 2021-06-01 |
| 10957851 | Magnetic layer for magnetic random access memory (MRAM) by moment enhancement | Guenole Jan, Jodi Mari Iwata, Huanlong Liu, Yuan-Jen Lee, Jian Zhu | 2021-03-23 |
| 10868235 | Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM | Robert Beach, Guenole Jan, Yu-Jen Wang | 2020-12-15 |
| 10797225 | Dual magnetic tunnel junction (DMTJ) stack design | Vignesh Sundar, Yu-Jen Wang, Luc Thomas, Guenole Jan, Sahil Patel | 2020-10-06 |
| 10797232 | Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions | Sahil Patel, Guenole Jan, Vignesh Sundar, Dongna Shen, Yu-Jen Wang +2 more | 2020-10-06 |
| 10784310 | Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin torque transfer-magnetic random access memory) devices | Huanlong Liu, Guenole Jan, Jian Zhu, Yuan-Jen Lee, Jodi Mari Iwata +2 more | 2020-09-22 |
| 10665773 | Nitride capping layer for spin torque transfer (STT)-magnetoresistive random access memory (MRAM) | Jodi Mari Iwata, Guenole Jan, Vignesh Sundar, Jian Zhu, Huanlong Liu | 2020-05-26 |
| 10658577 | Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy | Huanlong Liu, Yuan-Jen Lee, Jian Zhu, Guenole Jan, Luc Thomas +2 more | 2020-05-19 |
| 10622047 | Free layer structure in magnetic random access memory (MRAM) for Mo or W perpendicular magnetic anisotropy (PMA) enhancing layer | Hideaki Fukuzawa, Vignesh Sundar, Yu-Jen Wang | 2020-04-14 |
| 10522744 | High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applications | Guenole Jan, Jodi Mari Iwata, Huanlong Liu, Yuan-Jen Lee, Jian Zhu | 2019-12-31 |
| 10522752 | Magnetic layer for magnetic random access memory (MRAM) by moment enhancement | Guenole Jan, Jodi Mari Iwata, Huanlong Liu, Yuan-Jen Lee, Jian Zhu | 2019-12-31 |
| 10522745 | Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions | Sahil Patel, Guenole Jan, Vignesh Sundar, Dongna Shen, Yu-Jen Wang +2 more | 2019-12-31 |
| 10522747 | Fully compensated synthetic ferromagnet for spintronics applications | Jian Zhu, Guenole Jan, Yuan-Jen Lee, Huanlong Liu, Po-Kang Wang | 2019-12-31 |
| 10522749 | Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damage | Dongna Shen, Yu-Jen Wang, Vignesh Sundar, Sahil Patel | 2019-12-31 |
| 10516100 | Silicon oxynitride based encapsulation layer for magnetic tunnel junctions | Vignesh Sundar, Yu-Jen Wang, Dongna Shen, Sahil Patel | 2019-12-24 |
| 10516101 | Physical cleaning with in-situ dielectric encapsulation layer for spintronic device application | Yu-Jen Wang, Keyu Pi | 2019-12-24 |
| 10490733 | Seed layer for multilayer magnetic materials | Guenole Jan | 2019-11-26 |
| 10475564 | Perpendicularly magnetized ferromagnetic layers having an oxide interface allowing for improved control of oxidation | Luc Thomas, Guenole Jan | 2019-11-12 |
| 10439132 | Protective passivation layer for magnetic tunnel junctions | Jodi Mari Iwata, Guenole Jan | 2019-10-08 |
| 10431736 | Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy | Huanlong Liu, Yuan-Jen Lee, Jian Zhu, Guenole Jan, Luc Thomas +2 more | 2019-10-01 |
| 10312433 | Reduction of capping layer resistance area product for magnetic device applications | Guenole Jan | 2019-06-04 |
| 10230044 | Fully compensated synthetic ferromagnet for spintronics applications | Jian Zhu, Guenole Jan, Yuan-Jen Lee, Huanlong Liu, Po-Kang Wang | 2019-03-12 |