Issued Patents All Time
Showing 76–100 of 188 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8987847 | Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications | Guenole Jan, Yu-Jen Wang | 2015-03-24 |
| 8987849 | Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications | Guenole Jan, Yu-Jen Wang | 2015-03-24 |
| 8987848 | Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications | Guenole Jan, Yu-Jen Wang | 2015-03-24 |
| 8981505 | Mg discontinuous insertion layer for improving MTJ shunt | Takahiro Moriyama, Yu-Jen Wang | 2015-03-17 |
| 8969982 | Bottom electrode for MRAM device | Rongfu Xiao, Cheng T. Horng, Chyu-Jinh Torng, Tom Zhong, Witold Kula +4 more | 2015-03-03 |
| 8962348 | Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications | Guenole Jan, Witold Kula, Yu-Jen Wang | 2015-02-24 |
| 8921961 | Storage element for STT MRAM applications | Witold Kula, Guenole Jan, Yu-Jen Wang | 2014-12-30 |
| 8900884 | MTJ element for STT MRAM | Witold Kula, Guenole Jan, Yu-Jen Wang | 2014-12-02 |
| 8878323 | Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications | Guenole Jan, Witold Kula, Yu-Jen Wang | 2014-11-04 |
| 8871365 | High thermal stability reference structure with out-of-plane aniotropy to magnetic device applications | Yu-Jen Wang, Witold Kula, Guenole Jan | 2014-10-28 |
| 8860156 | Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM | Robert Beach, Guenole Jan, Yu-Jen Wang | 2014-10-14 |
| 8852760 | Free layer with high thermal stability for magnetic device applications by insertion of a boron dusting layer | Yu-Jen Wang, Witold Kula, Guenole Jan | 2014-10-07 |
| 8823118 | Spin torque transfer magnetic tunnel junction fabricated with a composite tunneling barrier layer | Cheng T. Horng | 2014-09-02 |
| 8749003 | High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same | Cheng T. Horng, Chyu-Jiuh Tomg, Witold Kula | 2014-06-10 |
| 8726491 | Method of forming a spin-transfer torque random access memory (STT-RAM) device | Cheng T. Horng | 2014-05-20 |
| 8710603 | Engineered magnetic layer with improved perpendicular anisotropy using glassing agents for spintronic applications | Guenole Jan, Yu-Jen Wang | 2014-04-29 |
| 8698260 | Engineered magnetic layer with improved perpendicular anisotropy using glassing agents for spintronic applications | Guenole Jan, Yu-Jen Wang | 2014-04-15 |
| 8698261 | Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications | Guenole Jan, Yu-Jen Wang | 2014-04-15 |
| 8609262 | Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application | Cheng T. Horng, Guangli Liu, Robert Beach, Witold Kula, Tai Min | 2013-12-17 |
| 8592927 | Multilayers having reduced perpendicular demagnetizing field using moment dilution for spintronic applications | Guenole Jan, Witold Kula | 2013-11-26 |
| 8541855 | Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications | Guenole Jan, Witold Kula, Yu-Jen Wang | 2013-09-24 |
| 8508006 | Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications | Guenole Jan, Yu-Jen Wang | 2013-08-13 |
| 8470462 | Structure and method for enhancing interfacial perpendicular anisotropy in CoFe(B)/MgO/CoFe(B) magnetic tunnel junctions | Cheng T. Horng, Guenole Jan | 2013-06-25 |
| 8456893 | Magnetic tunnel junction (MTJ) to reduce spin transfer magnetization switching current | Cheng T. Horng | 2013-06-04 |
| 8436437 | High performance MTJ elements for STT-RAM and method for making the same | Cheng T. Horng, Chyu-Jiuh Torng, Witold Kula | 2013-05-07 |