Issued Patents All Time
Showing 101–125 of 188 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8404367 | Low switching current dual spin filter (DSF) element for STT-RAM and a method for making the same | Cheng T. Horng | 2013-03-26 |
| 8378330 | Capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same | Cheng T. Horng | 2013-02-19 |
| 8372661 | High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same | Cheng T. Horng, Chyu-Jiuh Torng, Witold Kula | 2013-02-12 |
| 8273666 | Process to fabricate bottom electrode for MRAM device | Rongfu Xiao, Cheng T. Horng, Chyu-Jinh Torng, Tom Zhong, Witold Kula +4 more | 2012-09-25 |
| 8268641 | Spin transfer MRAM device with novel magnetic synthetic free layer | Yimin Guo, Cheng T. Horng | 2012-09-18 |
| 8269292 | Magnetic tunnel junction (MTJ) to reduce spin transfer magnetizaton switching current | Cheng T. Horng | 2012-09-18 |
| 8184411 | MTJ incorporating CoFe/Ni multilayer film with perpendicular magnetic anisotropy for MRAM application | Kunliang Zhang, Min Li, Pokang Wang, Yuchen Zhou, Cheng T. Horng | 2012-05-22 |
| 8178363 | MRAM with storage layer and super-paramagnetic sensing layer | Po-Kang Wang, Yimin Guo, Cheng T. Horng, Tai Min | 2012-05-15 |
| 8176622 | Process for manufacturing a magnetic tunnel junction (MTJ) device | Cheng T. Horng, Chyu-Jiuh Torng, Witold Kula | 2012-05-15 |
| 8138561 | Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM | Cheng T. Horng, Chyu-Jiuh Torng, Po-Kang Wang, Robert Beach, Witold Kula | 2012-03-20 |
| 8080432 | High performance MTJ element for STT-RAM and method for making the same | Cheng T. Horng, Chyu-Jiuh Torng, Witold Kula | 2011-12-20 |
| 8062909 | MRAM with storage layer and super-paramagnetic sensing layer | Po-Kang Wang, Yimin Guo, Cheng T. Horng, Tai Min | 2011-11-22 |
| 8058698 | High performance MTJ element for STT-RAM and method for making the same | Cheng T. Horng, Chyu-Jiuh Torng, Witold Kula | 2011-11-15 |
| 8057925 | Low switching current dual spin filter (DSF) element for STT-RAM and a method for making the same | Cheng T. Horng | 2011-11-15 |
| 8058697 | Spin transfer MRAM device with novel magnetic synthetic free layer | Yimin Guo, Cheng T. Horng | 2011-11-15 |
| 8039885 | MRAM with storage layer and super-paramagnetic sensing layer | Po-Kang Wang, Yimin Guo, Cheng T. Horng, Tai Min | 2011-10-18 |
| 7986497 | Low resistance TMR read head fabricated by a novel oxidation method | Cheng T. Horng | 2011-07-26 |
| 7978440 | Seed/AFM combination for CCP GMR device | Min Li, Cheng T. Horng, Cherng-Chyi Han, Yue Liu, Yu-Hsia Chen | 2011-07-12 |
| 7948044 | Low switching current MTJ element for ultra-high STT-RAM and a method for making the same | Cheng T. Horng, Yimin Guo | 2011-05-24 |
| 7936539 | Bottom spin valve GMR sensor incorporating plural oxygen surfactant layers | Cheng T. Horng | 2011-05-03 |
| 7838436 | Bottom electrode for MRAM device and method to fabricate it | Rongfu Xiao, Cheng T. Horng, Chyu-Jinh Torng, Tom Zhong, Witold Kula +4 more | 2010-11-23 |
| 7808027 | Free layer/capping layer for high performance MRAM MTJ | Cheng T. Horng | 2010-10-05 |
| 7750421 | High performance MTJ element for STT-RAM and method for making the same | Cheng T. Horng, Chyu-Jiuh Torng, Witold Kula | 2010-07-06 |
| 7696548 | MRAM with super-paramagnetic sensing layer | Po-Kang Wang, Yimin Guo, Cheng T. Horng, Tai Min | 2010-04-13 |
| 7672093 | Hafnium doped cap and free layer for MRAM device | Cheng T. Horng, Chyu-Jiuh Torng, Witold Kula | 2010-03-02 |