Issued Patents All Time
Showing 25 most recent of 127 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| D1092305 | Electric bicycle frame | Jiang Yang | 2025-09-09 |
| D1092303 | Electric motorcycle | Jiang Yang | 2025-09-09 |
| 11957063 | Magnetoresistive element having a nano-current-channel structure | Rongfu Xiao, Jun Chen | 2024-04-09 |
| 11910721 | Perpendicular MTJ element having a cube-textured reference layer and methods of making the same | Rongfu Xiao, Jun Chen | 2024-02-20 |
| 11854589 | STT-SOT hybrid magnetoresistive element and manufacture thereof | Rongfu Xiao, Jun Chen | 2023-12-26 |
| 11805702 | Methods of forming perpendicular magnetoresistive elements using sacrificial layers | Rongfu Xiao, Jun Chen | 2023-10-31 |
| 11600660 | Bottom-pinned magnetic random access memory having a composite SOT structure | Rongfu Xiao, Jun Chen | 2023-03-07 |
| 11569440 | Making a memoristic array with an implanted hard mask | Rongfu Xiao, Jun Chen | 2023-01-31 |
| 11545290 | Magnetoresistive element having a giant interfacial perpendicular magnetic anisotropy | Rongfu Xiao, Jun Chen | 2023-01-03 |
| 11527708 | Ultra-fast magnetic random access memory having a composite SOT-MTJ structure | Rongfu Xiao, Jun Chen | 2022-12-13 |
| 11450466 | Composite seed structure to improve PMA for perpendicular magnetic pinning | Rongfu Xiao, Jun Chen | 2022-09-20 |
| 11450467 | Magnetoresistive element having a giant interfacial perpendicular magnetic anisotropy and method of making the same | Rongfu Xiao, Jun Chen | 2022-09-20 |
| 11444239 | Magnetoresistive element having an adjacent-bias layer and a toggle writing scheme | Rongfu Xiao, Jun Chen | 2022-09-13 |
| 11316102 | Composite multi-stack seed layer to improve PMA for perpendicular magnetic pinning | Rongfu Xiao, Jun Chen | 2022-04-26 |
| 11271034 | Method of manufacturing magnetic memory devices | — | 2022-03-08 |
| 11257862 | MRAM having spin hall effect writing and method of making the same | — | 2022-02-22 |
| 11251367 | Composite multi-stack seed layer to improve PMA for perpendicular magnetic pinning | Rongfu Xiao, Jun Chen | 2022-02-15 |
| 11114611 | Method to make MRAM with small footprint | — | 2021-09-07 |
| 11081154 | Synthetic magnetic pinning element having strong antiferromagnetic coupling | Rongfu Xiao, Jun Chen | 2021-08-03 |
| 11043631 | Perpendicular magnetoresistive elements | — | 2021-06-22 |
| 11038100 | Magnetoresistive element having a perpendicular AFM structure | — | 2021-06-15 |
| 10953319 | Spin transfer MRAM element having a voltage bias control | — | 2021-03-23 |
| 10937958 | Magnetoresistive element having a novel cap multilayer | — | 2021-03-02 |
| 10783943 | MRAM having novel self-referenced read method | — | 2020-09-22 |
| 10672977 | Perpendicular magnetoresistive elements | — | 2020-06-02 |