| 8557407 |
Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier |
Tong Zhao, Kunliang Zhang, Hui-Chuan Wang, Min Li |
2013-10-15 |
| 8484830 |
Method of manufacturing a CPP structure with enhanced GMR ratio |
Kunliang Zhang, Min Li, Chyu-Jiuh Torng |
2013-07-16 |
| 8337676 |
Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier |
Tong Zhao, Kunliang Zhang, Hui-Chuan Wang, Min Li |
2012-12-25 |
| 8289661 |
CPP structure with enhanced GMR ratio |
Kunliang Zhang, Min Li, Chyu-Jiuh Torng |
2012-10-16 |
| 8012316 |
FCC-like trilayer AP2 structure for CPP GMR EM improvement |
Kunliang Zhang, Dan Abels, Min Li, Chyu-Jiuh Torng, Chen-Jung Chien |
2011-09-06 |
| 8008740 |
Low resistance tunneling magnetoresistive sensor with composite inner pinned layer |
Tong Zhao, Hui-Chuan Wang, Kunliang Zhang, Min Li |
2011-08-30 |
| 7990660 |
Multiple CCP layers in magnetic read head devices |
Kunliang Zhang, Min Li |
2011-08-02 |
| 7978440 |
Seed/AFM combination for CCP GMR device |
Min Li, Cheng T. Horng, Cherng-Chyi Han, Yue Liu, Ru-Ying Tong |
2011-07-12 |
| 7918014 |
Method of manufacturing a CPP structure with enhanced GMR ratio |
Kunliang Zhang, Min Li, Chyu-Jiuh Torng |
2011-04-05 |
| 7872838 |
Uniformity in CCP magnetic read head devices |
Kunliang Zhang, Min Li |
2011-01-18 |
| 7780820 |
Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier |
Tong Zhao, Kunliang Zhang, Hui-Chuan Wang, Min Li |
2010-08-24 |
| 7672088 |
Heusler alloy with insertion layer to reduce the ordering temperature for CPP, TMR, MRAM, and other spintronics applications |
Kunliang Zhang, Min Li, Hui-Chuan Wang, Tong Zhao |
2010-03-02 |
| 7646568 |
Ultra thin seed layer for CPP or TMR structure |
Kunliang Zhang, Hui-Chuan Wang, Tong Zhao, Min Li, Cherng-Chyi Han |
2010-01-12 |
| 7610674 |
Method to form a current confining path of a CPP GMR device |
Kunliang Zhang, Daniel G. Abels, Min Li |
2009-11-03 |
| 7602033 |
Low resistance tunneling magnetoresistive sensor with composite inner pinned layer |
Tong Zhao, Hui-Chuan Wang, Kunliang Zhang, Min Li |
2009-10-13 |
| 7583481 |
FCC-like trilayer AP2 structure for CPP GMR EM improvement |
Kunliang Zhang, Dan Abels, Min Li, Chyu-Jiuh Torng, Chen-Jung Chien |
2009-09-01 |
| 7390529 |
Free layer for CPP GMR having iron rich NiFe |
Min Li, Cheng T. Horng, Cherng-Chyi Han, Ru-Ying Tong |
2008-06-24 |
| 7355823 |
Ta based bilayer seed for IrMn CPP spin valve |
Min Li, Kunliang Zhang, Chyu-Jiuh Torng |
2008-04-08 |
| 7352543 |
Ta based bilayer seed for IrMn CPP spin valve |
Min Li, Kunliang Zhang, Chyu-Jiuh Torng |
2008-04-01 |
| 7333306 |
Magnetoresistive spin valve sensor with tri-layer free layer |
Tong Zhao, Kunliang Zhang, Hui-Chuan Wang, Min Li |
2008-02-19 |
| 7331100 |
Process of manufacturing a seed/AFM combination for a CPP GMR device |
Min Li, Cheng T. Horng, Cherng-Chyi Han, Yue Liu, Ru-Ying Tong |
2008-02-19 |
| 7288281 |
CPP spin valve with ultra-thin CoFe(50%) laminations |
Min Li, Kunliang Zhang, Cheng T. Horng, Chyu-Jiuh Torng, Ru-Ying Tong |
2007-10-30 |
| 7238979 |
Buffer (seed) layer in a high-performance magnetic tunneling junction MRAM |
Cheng T. Horng, Liubo Hong, Ru-Ying Tong |
2007-07-03 |
| 6960480 |
Method of forming a magnetic tunneling junction (MTJ) MRAM device and a tunneling magnetoresistive (TMR) read head |
Cheng T. Horng, Liubo Hong, Ru-Ying Tong |
2005-11-01 |