LH

Liubo Hong

W( Western Digital (Fremont): 17 patents #41 of 473Top 9%
HT Headway Technologies: 16 patents #65 of 309Top 25%
Applied Materials: 11 patents #1,198 of 7,310Top 20%
HB Hgst Netherlands, B.V.: 11 patents #56 of 972Top 6%
AS Applied Spintronics: 10 patents #2 of 18Top 15%
MT Magic Technologies: 7 patents #13 of 54Top 25%
HG HGST: 6 patents #305 of 1,677Top 20%
RR Read Rite: 5 patents #45 of 240Top 20%
📍 San Jose, CA: #511 of 32,062 inventorsTop 2%
🗺 California: #4,195 of 386,348 inventorsTop 2%
Overall (All Time): #27,978 of 4,157,543Top 1%
72
Patents All Time

Issued Patents All Time

Showing 1–25 of 72 patents

Patent #TitleCo-InventorsDate
8969982 Bottom electrode for MRAM device Rongfu Xiao, Cheng T. Horng, Ru-Ying Tong, Chyu-Jinh Torng, Tom Zhong +4 more 2015-03-03
8797680 Perpendicular magnetic recording head having reduced shield notching Guanghong Luo, Honglin Zhu, Yun-Fei Li, Yingjian Chen 2014-08-05
8793866 Method for providing a perpendicular magnetic recording head Jinqiu Zhang, Yong Shen, Yizhong Wang, Hai Sun, Li He 2014-08-05
8673654 Underlayer for high performance magnetic tunneling junction MRAM Cheng T. Horng, Mao-Min Chen, Ru-Yin Tong 2014-03-18
8614864 Magnetoresistive device with a hard bias capping layer Honglin Zhu 2013-12-24
8553370 TMR reader structure having shield layer Honglin Zhu, Tsann Lin, Zheng Gao 2013-10-08
8553371 TMR reader without DLC capping structure Honglin Zhu, Hicham M. Sougrati, Quang Le, Jui-Lung Li, Chando Park 2013-10-08
8553360 Magnetic recording head having write pole with higher magnetic moment towards trailing edge 2013-10-08
8547660 Magnetic write head manufactured by an enhanced damascene process producing a tapered write pole with a non-magnetic spacer and non-magnetic bump Donald G. Allen, Amanda Baer, Yingjian Chen, Andrew Chiu, Wen-Chien David Hsiao +8 more 2013-10-01
8530988 Junction isolation for magnetic read sensor Guangli Liu 2013-09-10
8524095 Process to make PMR writer with leading edge shield (LES) and leading edge taper (LET) Fenglin Liu, Qiping Zhong, Honglin Zhu 2013-09-03
8498078 Magnetic head with flared write pole having multiple tapered regions Donald G. Allen, Aron Pentek, Thomas J. A. Roucoux, Sue Siyang Zhang, Yi Zheng 2013-07-30
8451560 Magnetic head with flared write pole with multiple non-magnetic layers thereover Aron Pentek, Yi Zheng 2013-05-28
8441757 Perpendicular magnetic write head with wrap-around shield, slanted pole and slanted pole bump fabricated by damascene process Yingjian Chen, Yimin Hsu, Edward Hin Pong Lee, Katalin Pentek 2013-05-14
8427791 Magnetic tunnel junction having a magnetic insertion layer and methods of producing the same Zheng Gao, Richard Hsiao, Sangmun Oh, Chando Park, Chang-Man Park 2013-04-23
8422276 Spacer structure in MRAM cell and method of its fabrication Jun Yuan, Mao-Min Chen 2013-04-16
8400733 Process to make PMR writer with leading edge shield (LES) and leading edge taper (LET) Kyusik Shin, Qiping Zhong, Honglin Zhu, Yingjian Chen, Fenglin Liu 2013-03-19
8349195 Method and system for providing a magnetoresistive structure using undercut free mask Weimin Si, Honglin Zhu, Winnie Yu, Rowena Schmidt 2013-01-08
8347489 Method for manufacturing a perpendicular magnetic write head having a leading edge tapered write pole, self aligned side shield and independent trailing shield Aron Pentek, Yi Zheng, Honglin Zhu 2013-01-08
8349197 Method for manufacturing a perpendicular magnetic write head having a tapered write pole and non-magnetic bump structure Wen-Chien David Hsiao, Yimin Hsu, Yi Zheng 2013-01-08
8347488 Magnetic write head manufactured by damascene process producing a tapered write pole with a non-magnetic step and non-magnetic bump Aron Pentek, Yi Zheng 2013-01-08
8316527 Method for providing at least one magnetoresistive device Honglin Zhu 2012-11-27
8310785 Perpendicular magnetic recording head Jinqiu Zhang, Yong Shen, Hongping Yuan, Tsung-Yuan Chen, Honglin Zhu 2012-11-13
8284517 Perpendicular magnetic recording head Hai Sun, Jinqiu Zhang, Hongping Yuan, Donghong Li, Yong Shen 2012-10-09
8273666 Process to fabricate bottom electrode for MRAM device Rongfu Xiao, Cheng T. Horng, Ru-Ying Tong, Chyu-Jinh Torng, Tom Zhong +4 more 2012-09-25